Correction to “Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides”
Hope Bretscher, Zhaojun Li, James Xiao, Diana Yuan Qiu, Sivan Refaely-Abramson, Jack A Alexander-Webber, Arelo Tanoh, Ye Fan, Geraud Delport, Cyan A Williams, Samuel D Stranks, Stephan Hofmann, Jeffrey B Neaton, Steven G Louie, Akshay Rao
2021-06-14
Abstract:In the methods section,“Device Preparation and Measure-ment”, the caption of Figure 5 incorrectly stated,“An example of the gate voltage versus mobility for different chemical treatment steps.” This should instead state,“Example transfer curves showing the conductivity, σ, as a function of back gate, VG, for MoS2 devices after different treatments.” This is correctly described in the text referring to this figure, but the caption was mislabeled. The amended Figure 5 appears below. We apologize for the mistake in the original submission.