Abstract:The W-Cu materials hold vast potential for applications in electronic information, nuclear energy, and aerospace sectors. Here, we report a new occurrence of solid-state amorphization on the Cu side near W-Cu interface. A potential function with accuracy close to density functional theory (DFT) is constructed using machine learning, while the atomic mechanism of solid amorphous nucleation and growth is unveiled through a combination of in-situ transmission electron microscopy (TEM) and molecular dynamics (MD) simulations. Our findings indicate that the Cu near W-Cu interface experiences an amorphous phase transition at 400 °C. This amorphous nucleation is linked to the stress coupling between the W-Cu interface and dislocations within Cu. The lattice distortion arising from dislocations, combined with interfacial stress, results in lattice twisting, leading to the formation of dislocation pileup, HCP and disordered structures. The results of the in-situ TEM show that the dislocation stacking and HCP structures exist for a short period of time, and these structures quickly turn into disordered structures, eventually forming an amorphous band with a width of about 8 nm at the W-Cu interface. However, the amorphous structure is unstable. As temperature rises, the amorphous structure undergoes recrystallization into an ordered structure. Furthermore, we investigated the atomic diffusion behavior of W-Cu. Simulation results reveal that the defect in W significantly impacts diffusion. In summary, our study provides theoretical support for the nucleation mechanism of solid-state amorphization, the understanding of interfacial stress-strain, and the application of W-Cu materials.

Structural Features and Thermal Properties of W/Cu Compounds Using Tight-Binding Potential Calculations

Development of A Tight-Binding Model for Cu and Its Application to A Cu-Heat-Sink under Irradiation

An empirical law for the elastic moduli of component-segregated W/Cu compounds

Theoretical study on the stability, elasticity, hardness and electronic structures of W–C binary compounds

Interfacial Reaction of W/Cu Examined by an N-Body Potential Through Molecular Dynamics Simulations

The nucleation and growth mechanism of solid-state amorphization and diffusion behavior at the W-Cu interface

Atomic cluster expansion interatomic potential for defects and thermodynamics of Cu-W system

Investigation on the WC/Cu interfacial bonding properties: First-principles prediction and experimental verification

Structurally driven asymmetric miscibility in the phase diagram of W-Ti

Machine learning potential for the Cu-W system

First-principles study of the energetics and the local chemical ordering of tungsten-based alloys

Solution and solubility of H atoms at the W/Cu interface.

Multi-scale simulations of the mechanical behaviors of the W-Cu joint interface with a diffusion layer

Construction of an n-Body Potential for Revealing the Atomic Mechanism for Direct Alloying of Immiscible Tungsten and Copper

Heterogeneous coherent interface thermodynamics and Wulff construction associated with the cubic-tetragonal-orthorhombic multi-step structural transition in Mn-Ni alloys

A First-principles Analysis of Structural, Electronic, Elastic, and Vacant Properties of BCC, FCC and HCP Tungsten at Different Electronic Temperatures

Comparative Study of Metastable Phase Formation in the Immiscible Cu–W System Byab Initiocalculation Andn-Body Potential

Microstructure and Thermal Property of W/cu Multilayer Composites

Electronic excitation induced non-thermal phase transition of tungsten

Alloying mechanisms of binary immiscible systems based on tungsten-copper composite materials

Corrigendum: Strain-stress relationship and dislocation evolution of W-Cu bilayers from a constructed n-body W-Cu potential (2019J. Phys.: Condens. Matter31305002).