Abstract:In the present paper, to fabricate electroluminescent devices CdSe QDs were used as active materials, TPD (N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine) was used as a hole transport layer, and ZnS was used as an electron transport layer. The electroluminescent properties of the organic/inorganic composite ITO/TPD/CdSe QDs/ZnS/Ag light emitting devices were studied. Both TPD and CdSe QDs thin films were spin-coated and ZnS thin films were deposited by magnetron sputtering. The surfaces of the devices are smooth. The luminescence (EL) peak of the CdSe QDs is at 580 nm which is assigned to the band-edge exciton emission. Compared to the previous EL device of ITO/ZnS/CdSe QDs/ZnS/Ag, it is seen that the new devices do not display surface state related emission peaks and EL intensity is about 10 folds that of the previous device. The enhancement of luminescence efficiency is attributed to both of the excitation of CdSe QDs by accelerated electron collision and carriers injection into QDs: (1) electrons are accelerated by the ZnS layer and collide with CdSe QDs, which excites electrons in QDs to excited states and allows them to emit photons; (2) the holes injected into QDs recombine with some of electrons excited in the QDs. The authors further studied the influence of thickness variation of ZnS on the luminescent properties. ZnS thin films are of 80, 120, and 160 nm thickness, respectively. It was found that as the thickness of ZnS increases the threshold voltage rises and EL intensity increases, but breakdown voltage decreases. The EL peak position blue shifts when the thickness of ZnS decreases. The explanation of underlying mechanism is given.

Charge Carrier Dynamics Investigation of CuInS2 Quantum Dots Films Using Injected Charge Extraction by Linearly Increasing Voltage (I-Celiv): the Role of ZnS Shell

Modelling Charge Transport and Electro-Optical Characteristics of Quantum Dot Light-Emitting Diodes

Effect of Submonolayer ZnS Shell on Biexciton Dynamics of Indium Phosphide Quantum Dots

Interfacial Charge Separation and Recombination in InP and Quasi-Type II InP/CdS Core/shell Quantum Dot-Molecular Acceptor Complexes.

[Influence of Parameters of ZnS Film on the Organic/inorganic Composite Luminescence Devices].

Enhanced Photocurrent Generation In Proton-Irradiated "Giant" Cdse/Cds Core/Shell Quantum Dots

Deciphering Charging Status, Absolute Quantum Efficiency, and Absorption Cross Section of Multicarrier States in Single Colloidal Quantum Dots

Charge Transfer Dynamics and Auger Recombination of CdTe/CdS Core/Shell Quantum Dots

Enhancement of Two-Photon Fluorescence and Low Threshold Amplification of Spontaneous Emission of Zn-processed CuInS2 Quantum Dots

Dynamics of Bound Exciton Complexes in CdS Nanobelts.

Charge-carrier dynamics in polycrystalline thin-film CuIn1−xGaxSe2 photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

Controlling charge separation and recombination rates in CdSe/ZnS type I core-shell quantum dots by shell thicknesses.

Effect of Interfacial Potential on Elementary Exciton Processes in InP-based Core/shell Quantum Dots

Controlling Interfacial Charge Separation and Recombination Dynamics in QDs by Wave Function Engineering

Studies of photoluminescence properties and thermal stability of Cu doped ZnCdS/ZnS quantum dots by various host composition

Influence of shells on the charge tunnelling behaviour in quantum-dot light-emitting diodes

Manipulating the Optoelectronic Properties of Quasi-type II CuInS<sub>2</sub>/CdS Core/Shell Quantum Dots for Photoelectrochemical Cell Applications

Lateral Quantum Confinement Regulates Charge Carrier Transfer and Biexciton Interaction in CdSe/CdSeS Core/crown Nanoplatelets

Aqueous Synthesis of Photoluminescence Enhanced CuInS2/ZnS Quantum Dots Via the Facile Hot Injection Growth of AgInS2 Interlayer

Identifying the Surface Charges and their Impact on Carrier Dynamics in Quantum‐Dot Light‐Emitting Diodes by Impedance Spectroscopy

Rigid CuInS 2 /ZnS Core/Shell Quantum Dots for High Performance Infrared Light-Emitting Diodes