Studies of photoluminescence properties and thermal stability of Cu doped ZnCdS/ZnS quantum dots by various host composition

Yingping Zhang,Siyi Liu,Jie Hua,Longshan Zhu,Xuan Liu,He Dong,Xi Yuan,Jin Wang
DOI: https://doi.org/10.1007/s10854-019-01780-5
2019-07-29
Abstract:Cu-doped ZnCdS/ZnS (Cu:Zn<sub>x</sub>Cd<sub>1−x</sub>S/ZnS) core/shell quantum dots (QDs) are synthesized by a facile one-pot noninjection approach to investigate the composition-dependent photoluminescence (PL) properties. The resulting monodisperse Cu:Zn<sub>x</sub>Cd<sub>1−x</sub>S/ZnS QDs exhibit a tuned band gap energy <em class="EmphasisTypeItalic">E</em><sub>g</sub> from 2.84 to 3.13 eV and a wide dopant emission band from 630 to 569 nm when Zn content x increases from 0.2 to 0.5. Furthermore, the decreasing FWHM with increasing Zn content reveals the emission mainly arises from the recombination of electrons in conductor band with localized holes in Cu-related T<sub>2</sub> and E level. With Zn content increasing in Zn<sub>x</sub>Cd<sub>1−x</sub>S host, the relatively perfect lattice match between Zn<sub>x</sub>Cd<sub>1−x</sub>S core and ZnS shell reduces the PL lifetime and increased PL quantum yield. The temperature dependent PL behavior suggests that the thermal stability of Cu:Zn<sub>x</sub>Cd<sub>1−x</sub>S/ZnS QDs is enhanced because the interface nonradiative centers are efficiently suppressed by increasing Zn content.
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