Suppression of Auger Recombination by Gradient Alloying in InAs/CdSe/CdS QDs
Laxmi Kishore Sagar,Golam Bappi,Andrew Johnston,Bin Chen,Larissa Levina,Makhsud I. Saidaminov,Dae-Hyun Nam,Min-Jae Choi,Sjoerd Hoogland,Oleksandr Voznyy,Edward H. Sargent,Petar Todorović,F. Pelayo García de Arquer
DOI: https://doi.org/10.1021/acs.chemmater.0c01788
IF: 10.508
2020-08-19
Chemistry of Materials
Abstract:Colloidal quantum dots are promising for low-cost optoelectronic devices such as solar cells, light-emitting diodes (LEDs), lasers, and photodetectors. InAs-based quantum dots (QDs) are well suited for near-infrared (NIR) applications; however, to date, the highest-QY InAs QDs have exhibited short biexciton Auger lifetimes of ∼<50 ps. Here, we report a band engineering strategy that doubles the Auger lifetime in InAs CQDs. By developing a continuously graded thick CdSe<i><sub>x</sub></i>S<sub>1–</sub><i><sub>x</sub></i> shell, we synthesize InAs/CdSe<i><sub>x</sub></i>S<sub>1<i>–x</i></sub>/CdS CQDs that enable a smooth progression from the core to the outer shell, slowing the Auger process. We report a biexciton Auger lifetime of ∼105 ps compared to 17 ps for control InAs/CdSe/CdS CQDs. This represents a 2× increase of the Auger lifetime relative to the best value reported for InAs CQDs in prior literature.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.0c01788?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.0c01788</a>.Information on the absorption spectra of InAs core, InAs/CdSe, and InAs/CdSe<i><sub>x</sub></i>S<sub>1–<i>x</i></sub>/CdS; size histograms; high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) line scan and energy-dispersive X-ray spectroscopy (EDS) analysis; XPS results of InAs core, InAs/CdSe, InAs/CdSe/CdS, and InAs/CdSe<i><sub>x</sub></i>S<sub>1–</sub><i><sub>x</sub></i>/CdS; X-ray diffraction studies (XRD); determination of the exciton population; electron and hole wave functions of InAs core/shell samples; 5.4 nm sized InAs/CdSe core/shell QD characterization; 6.7 nm sized InAs/CdSe/CdS core/shell/shell QD characterization; determination of exciton population in a InAs core/shell sample; summary of exciton decay processes at ⟨<i>N</i>⟩ ∼ 1 for InAs core/shell samples; electron and hole wave function distributions in InAs/CdSe, InAs/CdSe/CdS, and InAs/CdSe<i><sub>x</sub></i>S<sub>1–</sub><i><sub>x</sub></i>/CdS quantum dots (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c01788/suppl_file/cm0c01788_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical