Dielectric Properties and Microstructures of Ta-doped BaTiO 3 –(bi 0.5 Na 0.5 )tio 3 Ceramics for X9R Applications

Zhengbo Shen,Xiaohui Wang,Longtu Li
DOI: https://doi.org/10.1007/s10854-016-5986-z
2018-01-01
Abstract:Multilayer ceramic capacitor (MLCC) chips have been successfully prepared through tape-casting and screen-printing. Conventional sintering method and two-step sintering method with different sintering temperature and holding time are used to obtain the MLCC chips. The scanning electron microscopes show that MLCC chips sintered by two-step sintering at T1=1200°C and T2=1130°C for 3h have a highly dense dielectric layer. The temperature coefficient of capacitance (TCC) of the MLCC chip is less than ±15% from-60°C to 235 °C that satisfactorily meets the requirement of X9R. The average capacitance and the dielectric loss of the MLCC chip are 88nF and 1.8% at the room temperature, respectively.
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