Abstract:Artificial intelligence has made remarkable advancements in recent years, leading to the development of algorithms and models capable of handling ever-increasing amounts of data. The computational demands of these algorithms necessitate circuit and architecture designs that go beyond the von-Neumann paradigm. Content addressable memories (CAMs), which implement parallel associative search functionality within memory blocks to overcome the memory wall bottleneck, have proven to be effective for data-intensive tasks. While current CAM designs have achieved higher storage density and energy efficiency than their CMOS-based counterparts by leveraging emerging non-volatile memories (NVM), most of these implementations are limited to binary storage cells. In this work, we propose SEE-MCAM, scalable and compact multi-bit CAM (MCAM) designs that utilize the three-terminal ferroelectric FET (FeFET) as the proxy. By exploiting the multi-level-cell characteristics of FeFETs, our proposed SEE-MCAM designs enable multi-bit associative search functions and achieve better energy efficiency and performance than existing FeFET-based CAM designs. We validated the functionality of our proposed designs by achieving 3 bits per cell CAM functionality, resulting in 3x improvement in storage density. The area per bit of the proposed SEE-MCAM cell is 8% of the conventional CMOS CAM. We thoroughly investigated the scalability and robustness of the proposed design. Evaluation results suggest that the proposed 2FeFET-1T SEE-MCAM achieves 9.8x more energy efficiency and 1.6x less search latency compared to the CMOS CAM, respectively. When compared to existing MCAM designs, the proposed SEE-MCAM can achieve 8.7x and 4.9x more energy efficiency than ReRAM-based and FeFET-based MCAMs, respectively. Benchmarking results show that our approach provides up to 3 orders of magnitude improvement in speedup and energy efficiency over a GPU implementation in accelerating a novel quantized hyperdimensional computing (HDC) application.

Multi-context non-volatile content addressable memory using magnetic tunnel junctions

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

A Scalable 2T-1Fefet Based Content Addressable Memory Design for Energy Efficient Data Search

A Novel Multi-Context Non-Volatile Content-Addressable Memory Cell and Multi-Level Architecture for High Reliability and Density.

A Novel 15T-4MTJ Based Non-volatile Ternary Content-Addressable Memory Cell for High-Speed, Low-Power and High-Reliable Search Operation.

Ultra-High Density Content Addressable Memory Based on Current Induced Domain Wall Motion in Magnetic Track

SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search

A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation

Low Store Power, High Speed, High Density, Nonvolatile SRAM Design with Spin Hall Effect-Driven Magnetic Tunnel Junctions

CMOS-RRAM Based Non-Volatile Ternary Content Addressable Memory (nvTCAM)

A 5T-2MTJ STT-assisted Spin Orbit Torque based Ternary Content Addressable Memory for Hardware Accelerators

A High-Speed Robust NVM-TCAM Design Using Body Bias Feedback

Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

Content Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing

Implementation of 16 Boolean Logic Operations Based on One Basic Cell of Spin-Transfer-torque Magnetic Random Access Memory

RAM and TCAM Designs by Using STT-MRAM

Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM

Design of Magnetic Non-Volatile TCAM with Priority-Decision in Memory Technology for High Speed, Low Power, and High Reliability

Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory with Voltage-Controlled Magnetic Anisotropy Effect