Abstract:The surface symmetry of the substrate plays an important role in the epitaxial high-quality growth of 2D materials; however, in-depth and in situ studies on these materials during growth are still limited due to the lack of effective in situ monitoring approaches. In this work, taking the growth of MoSe2 as an example, the distinct growth processes on Al2O3 (112¯0) and Al2O3 (0001) are revealed by parallel monitoring using in situ reflectance anisotropy spectroscopy (RAS) and differential reflectance spectroscopy (DRS), respectively, highlighting the dominant role of the surface symmetry. In our previous study, we found that the RAS signal of MoSe2 grown on Al2O3 (112¯0) initially increased and decreased ultimately to the magnitude of bare Al2O3 (112¯0) when the first layer of MoSe2 was fully merged, which is herein verified by the complementary DRS measurement that is directly related to the film coverage. Consequently, the changing rate of reflectance anisotropy (RA) intensity at 2.5 eV is well matched with the dynamic changes in differential reflectance (DR) intensity. Moreover, the surface-dominated uniform orientation of MoSe2 islands at various stages determined by RAS was further investigated by low-energy electron diffraction (LEED) and atomic force microscopy (AFM). By contrast, the RAS signal of MoSe2 grown on Al2O3 (0001) remains at zero during the whole growth, implying that the discontinuous MoSe2 islands have no preferential orientations. This work demonstrates that the combination of in situ RAS and DRS can provide valuable insights into the growth of unidirectional aligned islands and help optimize the fabrication process for single-crystal transition metal dichalcogenide (TMDC) monolayers.

Reflection High-Energy Electron Diffraction Measurements of Reciprocal Space Structure of 2D Materials

A Study of Rheed Pattern from the Epitaxial Growth of Si-Ge Crystal

Revealing the Crystalline Integrity of Wafer-Scale Graphene on SiO2/Si: an Azimuthal RHEED Approach.

Reflection Surface X-Ray Diffraction Patterns: K-Space Images

Spotting the Differences in Two-Dimensional Materials - the Raman Scattering Perspective.

Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction

Resolving the optical anisotropy of low-symmetry 2D materials.

Direct and Diffuse Reflection of Electron Waves at Armchair Edges of Epitaxial Graphene

In Situ Studies on the Influence of Surface Symmetry on the Growth of MoSe2 Monolayer on Sapphire Using Reflectance Anisotropy Spectroscopy and Differential Reflectance Spectroscopy

Application of RHEED in the Calculation of Al_2O_3 Interplanar Distance

Geometric Analysis of Surface Resonance Conditions in Reflection High Energy Electron Diffraction

Direct Identification of Monolayer Rhenium Diselenide by an Individual Diffraction Pattern

The evolution of 3×3,6×6,√3×√3R30° and 6√3×6√3R30° superstructures on 6H–SiC (0001) surfaces studied by reflection high energy electron diffraction

Time-resolved reflection surface x-ray diffraction

Direct Synthesis and in Situ Characterization of Monolayer Parallelogrammic Rhenium Diselenide on Gold Foil

Identifying the Non-Identical Outermost Selenium Atoms and Invariable Band Gaps Across the Grain Boundary of Anisotropic Rhenium Diselenide

In-plane Optical Anisotropy in ReS2 Flakes Determined by Angle-Resolved Polarized Optical Contrast Spectroscopy

A Reliable Way of Mechanical Exfoliation of Large Scale Two Dimensional Materials with High Quality

Regulating Electron Diffraction Direction with Cylindrically Symmetric Rotating Crystal

In-situ quantification of the surface roughness for facile fabrications of atomically smooth thin films

X-ray diffraction and the symmetry of ultrathin crystalline materials between two-dimensional and three-dimensional crystals.