Abstract:Topological insulators (TIs) are bulk insulators with unusual gapless metallic surface states protected by time reversal symmetry. The topological surface states are expected to yield unique phenomena, such as spin-momentum locking and the suppression of non-magnetic backscattering. The surface states with a Dirac cone like dispersion relation have been observed directly using Angle-resolved photoemission spectroscopy (ARPES). Their signatures in electrical transport properties have also been reported although the transport behaviors are complicated by the fact that the samples often have dominating conduction from bulk channels due to high carriers density from impurity states. It is theoretically predicted that the surface states are robust against strong disorders, but it has not been tested experimentally. Bi2Te3, a member of the Bi2Se3 family, has been demonstrated to be a promising candidate of 3D topological insulators. In this work, various transport studies have been carried out on Bi2Te3 nanotubes with strong disorders. As essentially narrow gap semiconductors with band gaps of 100 to 300 meV, the Bi2Se3 family often have conducting bulk due to impurity doping and lattice imperfection, such as vacancies, dislocations, and defects. Several approaches have been applied to reduce bulk conductivity. The first one is to compensate bulk carriers by chemical doping or field effect, which drags Fermi level back to bang gap. Another is to fabricate nano-scale samples with enhanced surface-to-volume ratio, and effectively reduce the weight of bulk conduction. In our work we have prepared Bi2Te3 nanotubes by solution phase method utilizing Kirkendall effect. Due to the nature of this process, polycrystalline Bi2Te3 nanotubes form with extremely strong disorders. In this way, bulk carriers are strongly localized and the samples are brought from a heavily doped band semiconductor to the regime of Anderson insulator. We have demonstrated that the bulk conductance of the nanotubes is truly insulating and characterized by Mott Variable Range Hopping (VRH) mechanism. Despite the strongly disordered bulk channel, Aharonov-Bohm (AB) like oscillations in magnetoconductance have been observed on the nanotubes at low temperatures. The conductance oscillations differ from those on either ballistic or diffusive normal metals. With the combination of theoretical analysis and simulations, we show that these oscillations originate from the outer surface states of the nanotubes. Their behaviors are consistent with the prediction of the “anomalous AB effect” of topological surface states. In comparison with published work on clean TIs, we provide a direct demonstration of the fundamental aspect of topological surface states, namely their robustness to time-reversal invariant disorder. The interplay between a TI and a superconductor (SC) is another interesting topic to explore the exotic behaviors of topological surface states. For example, proximity induced superconductivity on topological insulators leads to the new phase of…

Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films

Progress in Epitaxial Thin-Film Na3 Bi as a Topological Electronic Material

Progress in epitaxial thin-film Na3Bi as a topological electronic material

Topological Edge Transport in Millimetre-Scale Thin Films of Na3Bi

Topological Dirac Semimetal Na3Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy

Dimensional Crossover and Topological Phase Transition in Dirac Semimetal Na 3 Bi Films.

Electric-field-tuned topological phase transition in ultrathin Na 3 Bi

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Infrared electrodynamics and ferromagnetism in the topological semiconductors Bi$_2$Te$_3$ and Mn-doped Bi$_2$Te$_3$

Challenges of Topological Insulator Research: Bi2Te3 Thin Films and Magnetic Heterostructures

Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Helical Edge Transport in Millimeter-Scale Thin Films of Na3Bi.

Elemental topological Dirac semimetal α-Sn with high quantum mobility

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films

Massive Dirac Fermions and Strong Shubnikov-de Haas Oscillations in Topological Insulator Sm,Fe:Bi2Se3 Single Crystals

Magnetized topological insulator multilayers