Abstract:Using the complex image method (CIM), we have analyzed the frequency and temperature dependencies of substrate eddy currents for single-ended and differential spiral inductors on a lossy silicon substrate. From our analysis, we have derived a set of accurate closed-form expressions for calculating inductances and substrate losses due to substrate eddy currents. Here, we propose a frequency-dependent eleven-element equivalent circuit model based on these formulas. We established the validity of the model by comparing the simulated and measured results, which are in good agreement. Index Terms—Complex image method (CIM), differential inductor, eddy currents, greenhouse algorithm, inductor model. HE high operating frequencies, at which deep submicrom- eter and nano-scale CMOS devices are able to operate, have brought radio-frequency integrated circuits (RFICs) in the realm of CMOS making the quality factor of the on-chip spiral inductors a focus of intense research. The quality factor of the on-chip inductor is limited by the losses due to the finite conduc- tivity of the metal and the conducting silicon substrate. Non-per- fect metal wires used to form spiral inductors cause ohmic loss due to the non-zero resistance at low frequencies. Additionally the non-uniform current distribution in metal wires at high fre- quencies increases the losses and degrades the quality factor of inductors. This loss mechanism has been extensively studied as skin- and proximity-effect (1)-(12).

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