Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.

A Study of the Structure Optimization of Silicon-Based Solar Cells

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Silicon-nanocrystal-incorporated Ternary Hybrid Solar Cells

Application of Silicon Nanocrystals in Solar Cells

Silicon Nanocrystal Conjugated Polymer Hybrid Solar Cells with Improved Performance

Study on silicon quantum dots sensitized solar cells

Fabrication of TiO 2 nanorod array/semiconductor nanocrystal hybrid structure for photovoltaic applications

Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties

Broadband Solar Spectral Conversion in Near-Infrared Quantum Cutting <formula formulatype="inline"><tex Notation="TeX">$\hbox{Ce}^{3+}\hbox{-Tb}^{3+}/\hbox{Yb}^{3+}$</tex></formula> System for Improving Si Solar-Cell Performance

Modeling Of Quantum Cutting Systems In Tm3+/Yb3+-Codoped Spectral Converters For Sc-Si Solar-Cell Efficiency Enhancement

Broadband Solar Spectral Conversion in Near-Infrared Quantum Cutting $\Hbox{ce}^{3+}\hbox{-Tb}^{3+}/\hbox{yb}^{3+}$ System for Improving Si Solar-Cell Performance

Nanostructural Optimization Of Silicon/Pedot: Pss Hybrid Solar Cells For Performance Improvement

High Performance Nanostructured Silicon-Organic Quasi P-N Junction Solar Cells Via Low-Temperature Deposited Hole and Electron Selective Layer.

Performance enhancement of a proposed solar cell microstructure based on heavily doped silicon wafers

Near-infrared quantum cutting and energy transfer mechanism in Lu2O3: Tm3+/Yb3+ phosphor for high-efficiency photovoltaics

Surface Nanostructure Optimization for Solar Energy Harvesting in Si Thin Film Based Solar Cells

Broadband Sensitized NIR Quantum Cutting Materials for Silicon Solar Cells: Progress, Challenges, and Perspectives

Light Trapping and Down‐Shifting Effect of Periodically Nanopatterned Si‐Quantum‐Dot‐Based Structures for Enhanced Photovoltaic Properties