Abstract:By using first-principles method in the density-functional theory, we clarify the atomic and electronic structures of silicene and germanene on 1×1 GaAs(111). We find stable structures for silicene and germanene on both the As-terminated and Ga-terminated GaAs surfaces. The structures of silicene and germanene are similar to those of the free-standing ones, which present a honeycomb-hexagonal geometry. The cohesive energies of silicene and germanene on both As and Ga sides of GaAs surfaces are comparable to those of their bulk structures and/or those on Ag(111) substrates which have been widely observed in experiment, showing the possibility of synthesizing them on both sides of GaAs surfaces in experiment. The corresponding binding energies are in a range of 0.56-1.37 eV per Si (Ge) atom, 10 times larger than the usual van der Waals interaction, showing the covalent interaction between silicene (germanene) and GaAs surfaces. The band structure calculations show that such a covalent interaction induces the absence of Dirac electrons for silicene and germanene on GaAs surfaces. We then explore the method of recovering the Dirac electrons by using hydrogen (H) intercalation. It is found that the intercalated H atoms are chemically bonded to GaAs surface, and the silicene (germanene) shifts upward distance from GaAs surface increasing from 2.50-2.58 Å to 3.49-3.86 Å, where a covalent van-der-Waals interaction transition happens between silicene (germanene) and GaAs surface. Moreover, the distances between silicene (germanene) and H atoms are 30% and 8% larger than the atomic-radius sum of Si (Ge) and H on As-terminated and Ga-terminated GaAs surfaces, respectively. This shows that the interaction between silicene (germanene) and H on the As-terminated GaAs surface is obviously weaker than the typical covalent interaction, while on the Ga-terminated GaAs surface, it is comparable to the typical covalent interaction. This difference is induced by the difference in electronegativity between As and Ga atoms. We further find that the H intercalation recovers the Dirac electrons well on the As-terminated GaAs(111) due to the weaker Si (Ge)-H interaction, while it does not on the Ga-terminated GaAs(111) due to the stronger Si (Ge)-H interaction. The results are confirmed by performing calculations for silicene (germanene) on larger GaAs(111) surfaces, i.e., the 3×3 GaAs surface. Our study provides the theoretical basis for the preparation and application of silicene and germanene on semiconductor surfaces.

Absence of Dirac Electrons in Silicene on Ag (111) Surfaces

Absence And Presence Of Dirac Electrons In Silicene On Substrates

Crossover Between Silicene and Ultra-Thin Si Atomic Layers on Ag(111) Surfaces

Structural Tristability And Deep Dirac States In Bilayer Silicene On Ag(111) Surfaces

Electronic Structure Of Silicene On Ag(111): Strong Hybridization Effects

Silicene on Ag(111): an honeycomb lattice without Dirac bands

Formation, Structures and Electronic Properties of Silicene Oxides on Ag(111)

Band structure of hydrogenated silicene on Ag(111): Evidence for silicane

Mining Single-Electron Spectra of the Interface States from a Supercell Band Structure of Silicene on an Ag ( 111 ) Substrate with Band-Unfolding Methodology

Does Silicene on Ag(111) Have a Dirac Cone?

Atomic and Electronic Structures of Silicene and Germanene on Gaas(111)

Various Atomic Structures of Monolayer Silicene Fabricated on Ag(111)

Strong Band Hybridization Between Silicene and Ag(1 1 1) Substrate

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Emergent Dirac Fermions in Epitaxial Planar Silicene Heterostructure

Coexistence of multiple silicene phases in silicon grown on Ag(111)

Tuning the Band Gap in Silicene by Oxidation

The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)

The fate of the 2 root 3 x 2 root 3 R(30 degrees) silicene phase on Ag(111)

GaAs（111）表面硅烯、锗烯的几何及电子性质研究

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.