Abstract:The accurate measurement of the thermal conductivity in a wide range of semiconductors is of great importance for applications like power electronic devices, which is, however, quite challenging. Current measurement methods suffer from limited measurement range, non-accuracy, complexity, etc. We report in this work an effective in situ method for thermal conductivity measurement based on laser-excited Raman spectroscopy, which has the advantages of non-contact, non-destructive, facile preparation, easy operation, and the capability of a large measurement range. The critical relationship parameters correlating Raman peak shifts and temperature change can be extracted by monitoring and fitting the Raman peak movement at different temperatures. Here, the laser with the micrometer scale spot serves as a Raman scattering source and a heat source for the samples. The thermal conductivity of Si, SiC, polycrystalline diamond, and single crystalline diamond at room temperature was determined to be 140.2 ± 14.4, 414.7 ± 26.2, 1372.3 ± 229.0, and 1734.9 ± 280.6 W/(m K), respectively, which are in good agreement with the theoretical prediction. The temperature distribution of the samples was simulated by the finite element method, which confirms the experimental data. These results highlight the feasibility, reliability, and versatility of Raman spectroscopy for measuring semiconductor materials, particularly those with high thermal conductivity. This is of great interest for exploring semiconductor physics and practical applications like power electronic devices.

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