Abstract:The scattering mechanisms governing the transport properties of high mobility AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN spacer layer thicknesses from zero to 2 nm were presented. The major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to alloy disorder limits the electron mobility for samples having spacer layer thicknesses up to 0.3 nm. On the other hand, alloy scattering is greatly reduced as the AlN spacer layer thickness increases further, and hence the combination of acoustic, optical and interface roughness become operative with different degrees of effectiveness over different temperature ranges. The room-temperature electron mobility was observed to increase gradually as the AlN spacer layer increases. A peak electron mobility of 1630 cm(2) V-1 s(-1) was realized for the sample consisting of a 1 nm AlN spacer layer. Then, the electron mobility decreased for the sample with 2 nm AlN. Moreover, the measured 2DEG densities were also compared with the theoretical predictions, which include both piezoelectric and spontaneous polarization components existing at AlN/GaN interfaces. The experimental sheet carrier densities for all AlInN/AlN/GaN HEMT structures were found to be in excellent agreement with the theoretical predictions when the parasitic (unintentional) GaN layer deposited between AlN and AlInN was taken into account. From these analyses, 1 nm AlN spacer layer thickness is found to be the optimum thickness required for high electron mobility and hence low sheet resistance once the sheet carrier density is increased to the theoretically expected value for the sample without unintentional GaN layer.

Mobility limitations due to dislocations and interface roughness in AlGaN/AlN/GaN heterostructure

Mobility Limiting Scattering Mechanisms in Nitride-Based Two-Dimensional Heterostructures with the Ingan Channel

Fang–Howard Wave Function Modelling of Electron Mobility in AlInGaN/AlN/InGaN/GaN Double Heterostructures*

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Two-dimensional Electron Transport in AlGaN/GaN Heterostructures

The Effect of Dislocation and Interface-Roughness Scattering on Electron Mobility in the MgZnO/ZnO Heterostructure

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Magneto-transport Properties of MOVPE-grown Al X Ga 1-X N/AlN/GaN Heterostructures with High-Mobility Two-Dimensional Electron Gas

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Hole Mobility Enhancement Mechanism of Wurtzite GaN/AlN Heterojunction Quantum Well Under Tensile and Compressive Stresses

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

High-temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

A Modelling study of Electron transport in GaN/AlGaN superlattices using Monte Carlo simulation

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors