Abstract:Abstract In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X‐ray diffraction (XRD). The OE intensity of BH species scales linearly with the concentration of the boron precursor trimethylboron (TMB) in the feed gas. Addition of CO 2 as an oxygen source causes a proportional reduction of the BH signal. At a ratio C:O = 1, a reduction factor of ∼50 is obtained. It is shown for two diamond samples that the boron incorporation drops nearly identical to the BH emission intensity. We conclude that the influence of oxygen on boron incorporation is a pure gas phase effect. In contrast, CN and BH emission indicate a negligible interaction between N 2 and TMB added to the feed gas. At the same time, preliminary growth rate measurements show that the boron background pressure in the chamber after growth with TMB completely cancels the growth acceleration by nitrogen up to N 2 concentrations of 100 ppm which points to the dominance of surface processes. Heteroepitaxial diamond films grown on Ir at 50 mbar between 720 and 900 °C contain high intrinsic stress that varies from −2.2 GPa compressive at the lowest to slightly tensile at the highest deposition temperature. The observed behavior is similar to former work at 200 mbar in which effective climb of dislocations was suggested as responsible mechanism. Addition of boron rather enhances the stress formation than causing a relaxation. The B concentration in the heteroepitaxial films is deduced by SIMS, CL, and XRD and correlated with the TMB concentration in the gas phase.

The Concentration Gradient of Boron along the Growth Direction in Boron Doped Chemical Vapor Deposited Diamond

Influence of Boron Doping on Growth Characteristic of Diamond Films Prepared by Hot Cathode Dc Chemical Vapor Deposition

Growth Morphology of Boron Doped Single Crystal Diamond

STUDY OF BORON-DOPED DIAMOND FILMS BY HOT FILAMENT CVD

Effects of boron doping on the growth characteristic of diamond film

Direct visualization of boron dopant distribution and coordination in individual chemical vapor deposition nanocrystalline B-doped diamond grains

Investigation on Crystalline Structure, Boron Distribution, and Residual Stresses in Freestanding Boron-Doped Cvd Diamond Films

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Optical properties of boron-doped diamond

Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films

Preparation, Characterization and Electrochemical Properties of Boron-Doped Diamond Films on Nb Substrates

Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

Optical and Electrical Characterization of Boron-Doped Diamond

Effects of the additive boron on diamond crystals synthesized in the system of Fe-based alloy and carbon at HPHT

Micro-Raman scattering and photoluminescence study of boron-doped diamond films

Influence of the Boron-Doped Layer on the Secondary Electron Emission and Morphology of Diamond Film

The Effect of Boron Doping on the Morphology and Growth Rate of Micron Diamond Powders Synthesized by Hfcvd Method

Heavily boron-doped polycrystalline diamond films: Microstructure, chemical composition investigation and plasma in-situ diagnostics

Effect of boron doping gradient on cemented carbide diamond coatings

Internal Stress and Strain in Heavily Boron-Doped Diamond Films Grown by Microwave Plasma and Hot Filament Chemical Vapor Deposition

Direct Growth of Few-Layered Graphene on Boron Doped Diamond Surface with Varying Boron Doping Concentration