Effect of Temperature on Growth and Ultraviolet Photoluminescence of Zn Doped Aln Nanostructures

Zhiguo Wu,Weibo Zhang,Hairong Hu,Shiyong Zuo,Fengyi Wang,Pengxun Yan,Jun Wang,Renfu Zhuo,De Yan
DOI: https://doi.org/10.1016/j.matlet.2014.07.180
IF: 3
2014-01-01
Materials Letters
Abstract:Zn-doped AlN nanostructures were synthesized via a catalyst-free chemical vapor deposition method under different growth temperatures. The surface morphologies and size of nanostructures are significantly affected by the growth temperature. The undoped sample shows an ultraviolet emission band at 360nm, which is attributed to the transition from ONtoVAl defect complex to the ON level. With increasing temperature, the doped samples exhibit two new emissions centered at 282 and 320nm. The band at 320nm is related to the nitrogen vacancies, and the band at 282nm can be ascribed to the transition from nitrogen vacancies with three positive charges to neutral Zn acceptors. These results indicate that temperature increase favors the Zn incorporation which strongly affects the growth and luminescence of samples.
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