Strong enhancement of ultra-violet emission by Ce doping of ZnO sputtered films

c l heng,tao wang,hsuehjyh li,j j liu,j w zhu,a ablimit,w y su,h c wu,p g yin,t g finstad
DOI: https://doi.org/10.1016/j.matlet.2015.09.125
IF: 3
2016-01-01
Materials Letters
Abstract:We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100°C in N2 gas, the UV peak (≈3.34eV, width 133meV) – intensity for the film doped with Ce is two order of magnitude stronger than that of un-doped ZnO films. The large enhancement is correlated with improved crystallinity and appears due to fewer non-radiative recombination pathways. The improved crystallinity can be related to Ce affecting the self-texturing of ZnO during sputter deposition and annealing.
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