Abstract:This work investigates in the first place, the improvement in leakage current and breakdown field of the copper metal-insulator-semiconductor (Cu-MIS) capacitor with a plasma-enhanced chemical vapor deposited (PECVD) amorphous silicon oxycarbide (α-SiCO, k=3.7) dielectric barrier. This is followed by investigating the improvement in leakage current and breakdown field of the Cu-comb capacitor with a carbon-doped low-k PECVD organosilicate glass (k=3) as the intermetal dielectric and an α-SiCO dielectric film as the Cu cap barrier. The leakage current and breakdown field of Cu-MIS and Cu-comb capacitors are dependent on the species of the dielectric barrier. The Cu-MIS and Cu-comb capacitors with an α-SiCO dielectric barrier exhibit a leakage current at least three orders of magnitude smaller than those with an amorphous silicon carbide (α-SiC, k=4.4) dielectric barrier at an applied electric field of 1.6 MV/cm between 25 and 250°C. Moreover, the breakdown field of the Cu-MIS and Cu-comb capacitors with an α-SiCO dielectric barrier, measured at 200°C, are 60 and 25%, respectively, higher than that of the capacitors with an α-SiC barrier. The decreased leakage current and increased breakdown field of the Cu-MIS and Cu-comb capacitors with an α-SiCO dielectric barrier are attributed to the higher density, oxygen-improved film property, non-semiconductor behavior, and lower fringe- or surface-electric field of the α-SiCO dielectric film. © 2004 The Electrochemical Society. All rights reserved.

Evaluation of the Dielectric by Measuring Leakage Currents on Self-Built Capacitor-Like Devices

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the Second Order Approximation

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

Simulation of Steady State Leakage Current in Thin Films

Gate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor Capacitor

Dynamic leakage current compensation in ferroelectric thin-film capacitor structures

On the Current Conduction Mechanisms of Ceo2/La2o3 Stacked Gate Dielectric

Energy band diagram of metal/Tm2O3/Si stack structure acquired from the study of leakage current mechanisms

Improvement in Leakage Current and Breakdown Field of Cu-Comb Capacitor Using a Silicon Oxycarbide Dielectric Barrier

Manipulating Leakage Behavior Via Thickness in Epitaxial BaZr0.35Ti0.65O3 Thin Film Capacitors

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Electrical Characteristics and Conduction Mechanisms of Metal-Insulator-Metal Capacitors with Nanolaminated Al(2)O(3)-Hfo(2) Dielectrics

Reliable Observation Of Large Leakage-Current Reduction Of Thin Sio2 Induced By Phonon-Energy-Coupling Enhancement: Problems And Solution

Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Atomic-layer-deposited SiO2/TiO2/SiO2 Sandwiched Dielectrics for Metal–insulator–metal Capacitor Application

Characteristics of Leakage Current Mechanisms and SILC Effects of HfO2 Gate Dielectric

High-Temperature Conduction Behaviors of Hfo2/Tan-Based Metal-Insulator-Metal Capacitors

Fabrication of Electrospun Porous TiO2 Dielectric Film in a Ti–TiO2–Si Heterostructure for Metal–Insulator–Semiconductor Capacitors