Abstract:Sputtered Cu/Si thin films were experimentally prepared at different sputtering pressures and characterized using X-ray diffraction (XRD) and an atomic force microscope (AFM). Simultaneously, an application-oriented simulation approach for magnetron sputtering deposition was proposed in this work. In this integrated multiscale simulation, the sputtered atom transport was modeled using the Monte Carlo (MC) and molecular dynamics (MD) coupling method, and the deposition of sputtered atoms was simulated using the MD method. This application-oriented simulation approach was used to simulate the growth of Cu/Si(100) thin films at different sputtering pressures. The experimental results unveiled that, as the sputtering pressure decreased from 2 to 0.15 Pa, the surface roughness of Cu thin films gradually decreased; (111)-oriented grains were dominant in Cu thin films and the crystal quality of the Cu thin film was gradually improved. The simulation results were consistent with the experimental characterization results. The simulation results revealed that the transformation of the film growth mode from the Volmer-Weber growth mode to the two-dimensional layered growth mode resulted in a decrease in the surface roughness of Cu thin films; the increase in the amorphous compound CuSix and the hcp copper silicide with the decrease in the sputtering pressure was responsible for the improvement of the crystal quality of the Cu thin film. This work proposed a more realistic, integrated simulation scheme for magnetron sputtering deposition, providing theoretical guidance for the efficient preparation of high-quality sputtered films.

Surface Morphology And Interface Reaction Of Cu/Sio2/Si (111) Systems Prepared By Radio Frequency Magnetron Sputtering

Surface Morphology and Interface Reaction of Cu/SiO2/Si (111) Systems Prepared by Radio Frequency Magnetron Sputtering

Diffusion and Interface Reaction of Cu and Si in Cu/SiO2/Si (111) Systems

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Atomic Diffusion in Annealed Cu/Sio2/Si (100) System Prepared by Magnetron Sputtering

The Diffusion and Interfacial Reaction of Cu/Si(100) Systems

Interficial Stability of Cu/Cu(Ru)/Si Contact System for Barrier-Free Copper Metallization

Atomic Diffusion and Interface Reaction of Cu/Si (111) Films Prepared by Ionized Cluster Beam Deposition

On the Microcrystal Structure of Sputtered Cu Films Deposited on Si(100) Surfaces: Experiment and Integrated Multiscale Simulation

Atomic Diffusion In Cu/Si (111) And Cu/Sio2/Si (111) Systems By Neutral Cluster Beam Deposition

Analysis to Microstructure of CuO/SiO_2 Composite Thin Films:Fabricated by Radio Frequency Magnetron Co-sputtering and Annealing at High Temperature with NH_3 Atmosphere

Diffusion and Interface Reaction of Cu/Si (100) Films Prepared by Cluster Beam Deposition

Molecular Dynamics Simulation of Temperature Effects on Deposition of Cu Film on Si by Magnetron Sputtering

Thermal Stability of Cu/Si (111) Films Prepared by Ionized Cluster Beam Technique

Metal Copper Films Coated on Microparticle Substrates Using an Ultrasonic-Assisted Magnetron Sputtering System

Chemical Bonding of Magnetron-Sputtered Copper on Pecvd Amorphous Sicof Film

Morphology and Preferential Orientation of Electro-deposited Cu/Si Thin Films

Nano-Scale Surface Morphology Evolution of Cu/Ti Thin Films

AFM INVESTIGATIONS OF GROWTH OF Cu THIN FILMS DEPOSITED ON SILICON WAFERS

Structure and Properties of Ultrathin SiOx Films on Cu(111).

Cu Films Deposited by Unbalanced Magnetron Sputtering Enhanced by ICP and External Magnetic Field Confinement