PZT Thin Films from Bulk PZT for Vibration Power Harvester Applications

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DOI: https://doi.org/10.4028/www.scientific.net/AMR.418-420.1383
2012-01-01
Abstract:The objective of this work was the development of a technology for the fabrication of piezoelectric PZT thin films from bulk PZT on silicon wafer for micro power harvester applications. With the lapping technique, the thickness of bulk PZT was reduced from 300 mu m to 10 mu m at the top data. KOH etching for silicon was used to thin the thickness of silicon cantilever from 300 mu m to 15 mu m at the top data. The piezoelectric coefficient d(31) was measured to be - 12pC/N. Resonance frequency measurements on a 4mmX lmmX0.06mm cantilever resulted in a value of 430Hz, and the voltage output was around 0.68V at 1g acceleration. The result shows that the fabrication process is quite feasible.
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