An Implantation and Β Detection System Applied in Β-Decay Studies

Chao He,Xiangqing Li,Hui Hua,Zhihuan Li,Dongxing Jiang,Yanlin Ye,Shuangquan Zhang,Rui Han,Chuan Xu,Enhong Wang,Yiyuan Cheng,Junjie Sun,Chenyang Niu,Zhengyang Tian,Shuo Wang,He Wang,Yushou Song,Huilan Liu,Jiansong Wang,Zhengguo Hu,Yanyun Yang,Hushan Xu
DOI: https://doi.org/10.1016/j.nima.2014.02.023
2014-01-01
Abstract:To study the β decays of nuclei far from the β-stability line, an implantation and β detection system has been implemented at the Peking University. This detection system covers a wide energy range from keV to GeV while maintaining a good energy resolution and a low detection threshold. By correlating the implantation nuclei with their subsequent β-decays within the same pixel or adjacent pixels of a double-sided silicon detector (DSSD), the β decay properties of implanted nuclei can be measured with much less disturbance from other unstable nuclei and the random background.
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