Abstract:Understanding the influence that copper substrate surface symmetry and oxygen impurities have on the growth of graphene by chemical vapor deposition is important for developing techniques for producing high quality graphene. Therefore, we have studied the growth of graphene by catalytic decomposition of ethylene in an ultra-high vacuum chamber on both a clean Cu(100) surface and a Cu(100) surface pre-dosed with a layer of chemisorbed oxygen. The crystal structure of the graphene films was characterized with \emph{in-situ} low energy electron diffraction. By heating the clean Cu(100) substrate from room temperature to the growth temperature in ethylene, epitaxial graphene films were formed. The crystal quality was found to depend strongly on the growth temperature. At 900 $^\circ$C, well-ordered two-domain graphene films were formed. Pre-dosing the Cu(100) surface with a chemisorbed layer of oxygen before graphene growth was found to adversely affect the crystal quality of the graphene overlayer by inducing a much higher degree of rotational disorder of the graphene grains with respect to the Cu(100) substrate. The growth morphology of the graphene islands during the initial stages of nucleation was monitored with \emph{ex-situ} scanning electron microscopy. The nucleation rate of the graphene islands was observed to drop by an order of magnitude by pre-dosing the Cu(100) surface with a chemisorbed oxygen layer before growth. This reduction in nucleation rate results in the formation of much larger graphene islands. Therefore, the presence of oxygen during graphene growth affects both the relative orientation and average size of grains within the films grown on Cu(100) substrates.

Graphene Nucleation Preferentially at Oxygen-Rich Cu Sites Rather Than on Pure Cu Surface

Elucidation of heterogeneous graphene nucleation and growth through Cu surface engineering

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper.

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Effect of Cu Substrate Roughness on Growth of Graphene Domains at Atmospheric Pressure

Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth

Copper substrate as a catalyst for the oxidation of chemical vapor deposition-grown graphene

DFT Study on the Atomic-Scale Nucleation Path of Graphene Growth on the Cu(111) Surface.

Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition

Controllable Synthesis of Submillimeter Single-Crystal Monolayer Graphene Domains on Copper Foils by Suppressing Nucleation

Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study

Correlation between nanoparticle location and graphene nucleation in chemical vapour deposition of graphene

Study on the Diffusion Mechanism of Graphene Grown on Copper Pockets

Surface crystallographic structure insensitive growth of oriented graphene domains on Cu substrates

Controlled Nucleation of Graphene Domains on Copper with an Oxide Layer by Atmospheric Pressure Chemical Vapor Deposition

Oxygen functional groups induced formation of Cu2O nanoparticles on the surface of reduced graphene oxide

Intermediate Structures of Nucleation and Growth during Solidification of CuO Constrained by Graphene

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

Determining Whether Metals Nucleate Homogeneously on Graphite: A Case Study with Copper

Undulate Cu(111) Substrates: A Unique Surface for CVD Graphene Growth

Edge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach