Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator
Wencan Jin,Suresh Vishwanath,Jianpeng Liu,Lingyuan Kong,Rui Lou,Zhongwei Dai,Jerzy T. Sadowski,Xinyu Liu,Huai-Hsun Lien,Alexander Chaney,Yimo Han,Micheal Cao,Junzhang Ma,Tian Qian,Jerry I. Dadap,Shancai Wang,Malgorzata Dobrowolska,Jacek Furdyna,David A. Muller,Karsten Pohl,Hong Ding,Huili Grace Xing,Richard M. Osgood Jr
DOI: https://doi.org/10.1103/PhysRevX.7.041020
2017-04-11
Abstract:Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, are used to demonstrate conclusively that a rock-salt SnSe $\{111\}$ thin film epitaxially-grown on \ce{Bi2Se3} has a stable Sn-terminated surface. These observations are supported by low energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe $\{111\}$ thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe $\{111\}$ thin film is shown to yield a high Fermi velocity, $0.50\times10^6$m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.
Materials Science