Abstract:Topological superconductivity as an exotic quantum phenomenon with coupled nontrivial topological order and superconductivity together in a single substance has drawn extensive attention because of its novelty as well as the potential for quantum computation 1-6 . A direct idea for producing topological superconductors is to create superconductivity based on the well recognized topological insulators 7-14 . The topological insulating states in highly efficient thermoelectric materials Bi 2 Te 3 and Bi 2 Se 3 and their alloy B 2 Te 3-x Se x have been established from angle-resolved photoemission 15-17 and transport 18 experiments. Superconductivity was also observed based on these popular topological insulators by the application of pressure 19-21 , chemical dopant 22 , and heterostructures 23,24 . However, the experiments mainly focusing on Bi$_{2}$Se$_3$ doped by metals such as Cu 25-35 , Sr 36-39 , and Nb 40-46 have not provided the consistent evidence to support the topological superconductivity. Here we carry out a systematic high-pressure study on a topological insulator Bi 2 Te 2.7 Se 0.3 to provide the convincing evidence for the expected topological superconductivity. Four phases with different structures are found upon compression by the X-ray diffraction, Raman scattering, and electrical transport measurements. The Hall resistivity and electronic structure calculations help to identify the topological surface state in the entire initial phase, while superconductivity is found to coexist with such a state of the compressed material after its passing the electronic topological transition, followed by three other superconducting phases without topological character. For these superconducting phases, we observe that the upper critical field follows with the temperature in the critical exponent 2/3 for the first one with the topological surface state and 1 for the left. These observations support the realization of the topological superconductivity in the initial phase according to the theoretically proposed critical field measure. Therefore, this work points out a big pool and new direction for finding topological superconductors from topological thermoelectric materials. The results also demonstrate that the critical field measure is an easy and powerful method for the identification of topological superconductivity in the system where topological surface states and superconductivity coexist.

Superconductivity in the Surface States of a Bi2X3 Topological Insulator: Effects of a Realistic Model

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Topological Superconductivity in a Topological Insulator

Surface States of the Topological Insulator Bi_{1-x}Sb_x

Electronic Structures and Surface States of the Topological Insulatorbi1−xsbx

First-principles study of topological surface states and pressure induced phase transitions in a novel noncentrosymmetric superconductor PbTiSe2

Induced unconventional superconductivity on the surface states of Bi$_2$Te$_3$ topological insulator

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

The Coexistence of Superconductivity and Topological Order in the Bi 2 Se 3 Thin Films

Interplay between topological insulators and superconductors

Drive the Dirac Electrons into Cooper Pairs in SrxBi2Se3

Massive Dirac Surface States in Topological Insulator/magnetic Insulator Heterostructures

Scanning Tunneling Spectroscopy Investigations of Superconducting-Doped Topological Insulators: Experimental Pitfalls and Results

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Proximity-effect-induced Superconductivity in a Van Der Waals Heterostructure Consisting of a Magnetic Topological Insulator and a Conventional Superconductor

Model Hamiltonian for Topological Insulators

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

Realizing Gapped Surface States in the Magnetic Topological Insulator MnBi2−xSbxTe4

Magnetically Doped Semiconducting Topological Insulators

3 1 M ar 2 01 2 Surface Spectral Function of Momentum-dependent Pairing Potentials in a Topological Insulator : Application to Cu x Bi 2 Se