Abstract:In the present work, two compounds, in the Bi-Nd-Cr-S and Pb-Nd-Nb-Se systems, not reported to date were synthesized. The chemical composition and the structural determination of these complex compounds, at atomic resolution, was performed through conventional and aberration-corrected electron microscopy including selected area electron diffraction, high resolution (HR) transmission electron microscopy (TEM), HR scanning TEM, and the analytical associated techniques X-ray energy-dispersive spectroscopy and electron energy-loss spectroscopy. The average compositions are [(Bi0.4,Nd0.6)S]1.25CrS2 and [(Pb0.5,Nd0.5)Se]1.15(Nb1.0Se2)2, respectively. By using these electron microscopy techniques, we confirmed that both compounds can be described in term of two interpenetrated sublattices that fit along a but do not fit along b, giving rise to an incommensurate modulation. A closer inspection along the stacking direction of the subcell has provided an ideal structural model for [(Bi0.4,Nd0.6)S]1.25CrS2 based on the intergrowth of one layer of CrS2, three atoms thick, (111) B1 type, and one layer of (Bi, Nd)Se, two atoms thick, (100) B1 type. In [(Pb0.5,Nd0.5)Se]1.15(Nb1.0Se2)2 we found that two layers of NbSe2, which adopt the 2H-NbSe2 polytype, alternate with one layer of (Pb, Nd)Se B1 type. In addition, crystals showing extended defects, associated with the weak interaction between the layers, were frequently found.

Electronic Structure of the Misfit Layer Compound : Band Structure Calculations and Photoelectron Spectra

Electronic structure of the misfit layer compound (LaS)1.14NbS2

Effect of Lattice Misfit on the Stability of the Misfit Layer Compound (SnS)1+xNbS2

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Unmasking charge transfer in the Misfits: ARPES and ab initio prediction of electronic structure in layered incommensurate systems without artificial strain

Multi-band Superconductivity in a Misfit Layered Compound (Snse)1.16(nbse2)2

Effective Lattice Hamiltonian for Monolayer Tin Disulfide: Tailoring Electronic Structure with Electric and Magnetic Fields

Insight into the band structure engineering of single-layer SnS2 with in-plane biaxial strain.

Multi-band Superconductivity in a misfit layered compound (SnSe)<sub>1.16</sub>(NbSe<sub>2</sub>)<sub>2</sub>

Giant third-order nonlinear Hall effect in misfit layer compound (SnS)${1.17}$(NbS$_2$)$_3$

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Electronic structure and evidence for La vacancies in the misfit layer compound (La 1 −xS)1.20CrS2

Misfit layer compounds as ultra-tunable field effect transistors: from charge transfer control to emergent superconductivity

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Application of semi-ab initio method of band structure calculation to semiconductor superlattices

Synthesis and Electron Microscopy Study of the Quaternary Misfit Layer Chalcogenides {(Bi,Nd)S}1+δCrS2 and {(Pb,Nd)Se}1+δ(NbSe2)2

Structure And Physical Properties Of The Misfit Compounds (Pbse)(1.16)(Tise2)(M) (M=1, 2)

Crystal And Electronic Band Structure Of Cu2znsnx4 (X=S And Se) Photovoltaic Absorbers: First-Principles Insights

Unfolding the band structure of disordered solids: From bound states to high-mobility Kane fermions

Exciton Spectra and Layer Decomposition in MoSi2N4/WSi2N4 Heterostructures

Band Gap Engineering of Sno2 by Epitaxial Strain: Experimental and Theoretical Investigations