Abstract:Context: Monolayer NbS2 is a promising new two-dimensional material, and it is critical to develop effective methods to make NbS2 a material for nanodevices and photovoltaic applications. This study studied the strain rule of sulfur-deficient NbS2 structure by first principles. The results show that all defect structures introduce impurity states to enhance electron transport. The disulfide defect structure produces an indirect band gap under the action of tensile strain, which can reach up to 0.56eV and become a diluted semiconductor. The hybrid NbS2 exhibits high transparency under infrared, visible, and low-frequency ultraviolet light, improving the material's transmittance, optical response, and catalytic activity. The research results of this paper will provide a basis for the subsequent research of single-layer NbS2 and accelerate the research process of NbS2 as a new semiconductor material. Methods: We are on the surface perpendicular to the 3×3×1 NbS2 and use a 15 Å vacuum layer to avoid interacting with periodic images. The first-principles simulation uses the CASTEP module in Materials Studio to simulate the hypothetical model and relaxation optimization structure of single-layer NbS2 under strain and defect state. The calculation function is PBE (Perdew-Burke-Ernzerhof) function under the generalized gradient approximation (GGA) for an approximate calculation to describe the interaction between electrons and the interaction between electrons and ions. The pseudopotentials of 3s23p4 and 4d45s1 valence electron configurations were used for S and Nb atoms, respectively. Van der Waals correction is considered in the simulation process. Moreover, it includes spin-orbit coupling (SOC) effects. For the plane wave truncation energy, we set it at 500eV. The arrangement of the Brillouin area is divided by 6×6×1 gamma-centered Monkhorst-Pack grids. The lattice deformation of all hybrid structures is less than 0.05 Gpa, and the interatomic force is less than 0.03 eV/Å.

Effect of Lattice Misfit on the Stability of the Misfit Layer Compound (SnS)1+xNbS2

Electronic structure of the misfit layer compound (LaS)1.14NbS2

Electronic Structure of the Misfit Layer Compound : Band Structure Calculations and Photoelectron Spectra

Electronic and optical structural manipulation of NbS2 defects under strain: first-principles calculations

Multi-band Superconductivity in a Misfit Layered Compound (Snse)1.16(nbse2)2

Multi-band Superconductivity in a misfit layered compound (SnSe)<sub>1.16</sub>(NbSe<sub>2</sub>)<sub>2</sub>

Effects of Lattice Strains on the Interfacial Potential in La0.67ca0.33mno3/Srtio3 : Nb Heterojunctions

Misfit layer compounds as ultra-tunable field effect transistors: from charge transfer control to emergent superconductivity

Superconductivity in a Misfit Layered Compound (Snse)1.16(nbse2)

The Structural Stability of Mn3Sn Heusler Compound under High Pressure.

Effective Lattice Hamiltonian for Monolayer Tin Disulfide: Tailoring Electronic Structure with Electric and Magnetic Fields

Anisotropic Spin Fluctuations Induced by Spin‐Orbit Coupling in a Misfit Layer Compound (LaSe)1.14(NbSe2)

Synthesis and Electron Microscopy Study of the Quaternary Misfit Layer Chalcogenides {(Bi,Nd)S}1+δCrS2 and {(Pb,Nd)Se}1+δ(NbSe2)2

Giant third-order nonlinear Hall effect in misfit layer compound (SnS)${1.17}$(NbS$_2$)$_3$

NbSe$_{2}$'s charge density wave collapse in the (LaSe)$_{1.14}$(NbSe$_{2}$)$_{2}$ misfit layer compound

Structure And Physical Properties Of The Misfit Compounds (Pbse)(1.16)(Tise2)(M) (M=1, 2)

Misfit-Layered Compound Pbtis3 With Incommensurate Modulation: Transmission Electron Microscopy Analysis And Transport Properties

Effect of strain on the electronic and optical properties of (non-)metal adsorbed NbS2monolayer

Intercalation: Building A Natural Superlattice for Better Thermoelectric Performance in Layered Chalcogenides

First Principles Study of Effect of Lattice Misfit on the Bonding Strength of Ni/Ni 3 Al Interface

Bistructural Pseudocontinuous Solid Solution with Hierarchical Microstructures from Ab initio Study: Application to the Mg2Sn−Mg3Sb2 System