Abstract:Good quality epitaxial β-SiC growth on Si(001) substrates is conventionally obtained by various chemical vapour deposition process using the reaction of carbon and silicon-containing gases at high temperature (around 1300°C). We explore here an alternative route, at lower sample temperature, where SiC growth is obtained by molecular beam epitaxy evaporation of Si with C2H4 cracking on a surface held at 850°C. Preliminary IR analyses show the expected absorption band at 794 cm−1 of β-SiC with a damping coefficient of 0.02 close to the theoretical value (0.01). Moreover, cross-sectional transmission electron microscopy and in-situ X-ray photoelectron spectroscopy studies revealed the presence of elemental Si on the SiC surface, related to out-diffusion of Si atoms from the substrate. This on-top diffusion generates large pyramid-shaped defects in the substrate along 〈011〉 directions and contributes to the formation of strong SiC islands emerging above other SiC regions presenting more regular two-dimensional growth. High resolution figures obtained by zooming on these islands allows us to probe their local polycrystalline atomic structure. These defects are not characteristic of our growth process as they were observed previously using other growth methods. Investigations are under way to determine a growth procedure which suppresses the formation of these defects.

Single Domain 3C-Sic Growth on Off-Oriented 4H-Sic Substrates

1 Single domain 3 CSiC growth on off-oriented 4 H-SiC substrates

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

Growth Optimization and Applicability of Thick On-Axis SiC Layers Using Sublimation Epitaxy in Vacuum

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates

The Growth of Si on Sic Complex Substrate by Cvd

Homoepitaxial Growth of Multiple 4H-Sic Wafers Assembled in a Simple Holder Via Conventional Chemical Vapor Deposition

LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-Sic(0001) Substrates

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Epitaxial Growth and Microstructure of Cubic Sic Films on Si Substrates

Homogeneous Growth of 3C-SiC Crystal Surface at Solid–Liquid Interface and Its Competitive Relationship

Study on 3C-Sic/si(111) by X-Ray Grazing Incident Diffraction

Observation of Si Out-Diffusion Related Defects in SiC Growth on Si(001)

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD