Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

New Concept of Planar Germanium MOSFET with Stacked Germanide Layers at Source/drain

DC and Analog/RF Investigation on Germanium Mosfet with Double-Schottky-barrier Source/drain

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Germanium-source L-shaped TFET with dual in-line tunneling junction

Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSix/CoSi2/Si Stack Interface

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Novel Schottky Barrier Mosfet with Dual-Layer Silicide Source/Drain Structure

A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

Schottky Barrier Mosfet Structure with Silicide Source/Drain on Buried Metal

A novel MOSFET structure with asymmetric Schottky and P-N junction source/drain on bulk silicon substrate

DFT Coupled with NEGF Study of N-Type MOSFET Based on 2D Planar B2S3 Semiconductor

A Novel Fin-Shape Double-Gate GaAs p-MOSFET with Intrinsic Source and Enhanced Switching Performance

A New Trench-Planner Gate Mosfet Structure

Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Low Switching Loss and Increased Short-Circuit Capability Split-Gate SiC Trench MOSFET with p-type pillar