Abstract:Heterogeneous atom doping has been proven as an efficient route to tune the physical and chemical properties of semiconductors, represented by the technically mature boron and phosphorus doping in bulk silicon. In the two-dimensional (2D) transitional-metal dichalcogenides semiconductors, substitutional doping dominates compared with the interstitial sites doping due to the ultrathin nature of 2D materials. However, unintentional doping can also obscure the structure-property relationship and cause the deviations from the ideally optical/electrical performances. Here, substitutional carbon doping into the monolayer molybdenum disulfide (MoS2) lattice during the normal chemical vapor deposition (CVD) synthesis process is discovered through a thorough analysis of the intermediate and final reaction products. The carbon originates from the relatively low-purity molybdenum precursor, which can be completely eliminated when a high-purity molybdenum precursor is utilized. The carbon-doped monolayer MoS2 exhibits mid-gap states brought by the Mo-d, S-p, and C-p orbital hybridization and gradually reduced band gaps as the doping concentration increases. As a result, the suppressed photoluminescence (PL) intensity and red shift PL position are observed. The finding is fundamental for understanding the unintentional carbon doping process in CVD growth of 2D semiconductors and identifies a source for the inconsistent PL performances in the CVD-derived samples.

Functionalization of monolayer MoS2 by substitutional doping: A first-principles study

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

Charge And Magnetic States Of Mn-, Fe-, And Co-Doped Monolayer Mos2

Tuning the Magnetic Properties of the Monolayer MoSe2 by Nonmetal Doping: First-principles Study

Magnetic Properties of Mn-doped Monolayer MoS2

Ab-initio study on the possible doping strategies for MoS$_2$ monolayers

Tuning of Electronic States and Magnetic Polarization in Monolayered MoS2 by Codoping with Transition Metals and Nonmetals

Electronic structures of defects and magnetic impurities in MoS2 monolayers

First Principles Study on Molecule Doping in MoS2 Monolayer

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

A First-Principles Study of Impurity Effects on Monolayer MoS2: Bandgap Dominated by Donor Impurities

First-principles Study of Monolayer MoS2 with Deficient and Excessive Mon and Sn (n = −3 → 3) Clusters on 5 × 5 Supercells

First-principles Study of Nonmetal Doped Monolayer MoSe2 for Tunable Electronic and Photocatalytic Properties

Effects of Se substitution and transition metal doping on the electronic and magnetic properties of a MoS x Se 2-x /h-BN heterostructure.

Effect of NM (B, C, N, O and F) doping and Fe NM co-doping on structure, electronic and magnetic properties of monolayer 2H MoTe 2 : A first principle investigation

The Effects of Nonmetal Dopants on the Electronic, Optical, and Catalytic Performances of Monolayer WSe2 by a First-Principles Study

First principle study of the effect of doping on the optoelectronic properties of Cr-adsorbed MoS2

Molten‐Salt‐Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS2 and Effectively Altering the Electronic Structure and Phononic Properties

Effects of Dopant Separation on Electronic States and Magnetism in Monolayer MoS2

Strain Tunable Magnetic Properties of 3d Transition-Metal Ion Doped Monolayer MoS2: A First-Principles Study