Abstract:Recently, the successful synthesis of biphenylene network (BPN) monolayers (A. V. Matetskiy et al. , Appl. Surf. Sci. , 2021, 539 , 148144) has resulted in significant progress in the study of carbon materials. Inspired by this material, the electronic structures and transport properties of graphene–BPN–graphene (G–BPN–G) nanojunction-based nanodevices are systematically studied using density functional theory and non-equilibrium Green's function methods. The results show that the I – V curves of two-dimensional (2D) and quasi-one-dimensional (Q1D) G–BPN–G devices exhibit intrinsic negative differential resistance (NDR) characteristics regardless of the electronic transport direction. But the electronic transport following the zigzag direction ( I z ) is faster than that along the armchair direction ( I a ) below a bias of 0.8 V, but when the bias is further increased, I a is greater than I z . For armchair-edged G–BPN–G nanoribbons, the metal or semi-conductive behaviors are dependent on their width and the kinds of passivated atoms on the edges. Specifically, the nanoribbons achieve the transition from semiconducting to metallic with an increase of the number of BPN in the heterogeneous structure by F-passivation and H-passivation. Moreover, O-passivated G–BPN–G nanoribbons always show metallic characteristics. Adjustable metal to semiconductor devices can be achieved by varying the combination of H- and O-passivated cells in Q1D G–BPN–G nanoribbon-based nanodevices. Overall, these interesting results demonstrate that these novel G–BPN–G devices have promising practical applications in future electronic nanodevices.

Fully spin-polarized transport induced by B doping in graphene nanoribbons

Half Metallicity along the Edge of Zigzag Boron Nitride Nanoribbons

Generating pure spin current in zigzag graphene nanoribbons by a thermal gradient: the effect of edge doping with BN pairs

π -magnetism and spin-dependent transport in boron pair doped armchair graphene nanoribbons

Prediction of Half Metallicity along the Edge of Boron Nitride Zigzag Nanoribbons

Conductance recovery and spin polarization in boron and nitrogen codoped graphene nanoribbons

Influence of B doping and N doping on structure and electronic properties of graphene

Improving Electronic Transport of Zigzag Graphene Nanoribbons by Ordered Doping of B or N Atoms

Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm

Electronic transport in graphene nanoribbons with sublattice-asymmetric doping

Impurity Induced Spin Filtering in Graphene Nanoribbons

Fully spin-dependent transport of triangular graphene flakes

Spin current distribution in antiferromagnetic zigzag graphene nanoribbons under transverse electric fields

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

Theoretical insight into the intrinsic electronic transport properties of graphene–biphenylene–graphene nanosheets and nanoribbons: a first-principles study

The design of bipolar spin semiconductor based on zigzag–edge graphene nanoribbons

Rectifying Behaviors Induced by BN-doping in Trigonal Graphene with Zigzag Edges

Redistribution of π and σ electrons in boron-doped graphene from DFT investigation

Broken edge spin-symmetry induces spin-polarized current in graphene nanoribbon

Noncollinear magnetism and half-metallicity in biased bilayer zigzag graphene nanoribbons

Isospin magnetism and spin-polarized superconductivity in Bernal bilayer graphene