Abstract:The nitrogen doping of graphene leads to graphene heterojunctions with a tunable bandgap, suitable for electronics, electrochemical, and sensing applications. However, the microscopic nature and charge transport properties of atomic-level nitrogen-doped graphene are still unknown, mainly due to the multiple doping sites with topological diversities. In this work, we fabricated the atomically well-defined N-doped graphene heterojunctions and investigated the cross-plane transport through these heterojunctions to reveal the effects of doping on their electronic properties. We found that different doping number of nitrogen atoms leads to a conductance difference of up to ~288%, and the conductance of graphene heterojunctions with nitrogen-doping at different positions in the conjugated framework can also lead to a conductance difference of ~170%. Combined ultraviolet photoelectron spectroscopy measurements and theoretical calculations reveal that the insertion of nitrogen atoms into the conjugation framework significantly stabilizes the frontier molecular orbitals, leading to a change in the relative positions of HOMO and LUMO to the Fermi level of the electrodes. Our work provides a unique insight into the role of nitrogen doping on the charge transport through graphene heterojunctions and materials at the single atomic level.

Rectifying Behaviors Induced by BN-doping in Trigonal Graphene with Zigzag Edges

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

Molecular Rectification in Triangularly Shaped Graphene Nanoribbons.

Improving Electronic Transport of Zigzag Graphene Nanoribbons by Ordered Doping of B or N Atoms

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Widely tunable carrier mobility of boron nitride-embedded graphene.

BN-Embedded Graphene with a Ubiquitous Gap Opening

Influence of B doping and N doping on structure and electronic properties of graphene

Tunable electron property induced by B-doping in g-C3N4

Possible N/P-Type Conductivity of Two-Dimensional Graphene Oxide by Boron and Nitrogen Doping: Evaluated Via Constrained Excitation

Modulating Magnetic Ordering of the Zigzag-Edge Trigonal Graphene by Functionalizations

Rectification Inversion in Oxygen Substituted Graphyne-Graphene-Based Heterojunctions

High-performance current rectification in a molecular device with doped graphene electrodes

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Transport properties of Mn-doped/adsorbed zigzag boron nitride nanoribbon based nanodevices

Negative Differential Resistance and Rectification Effects in Step-Like Graphene Nanoribbons

Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm

Atomic Scale Investigations of the Gate Controlled Tunneling Effect in Graphyne Nanoribbon

Z-Like Conducting Pathways in Zigzag Graphene Nanoribbons with Edge Protrusions

Atomically Well-defined Nitrogen Doping in the Cross-plane Transport through Graphene Heterojunctions

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.