Abstract:Electronic devices are progressively fabricated on flexible substrates allowing new fields of applications. A maskless and very flexible structuring process is offered by ablation using ultra-short pulse laser irradiation. Usually, certain areas of a functional thin film coating are locally removed to yield the needed device structures. Micro laser patterning quality is not only influenced by the beam properties (beam profile, fluence) but also by pulse overlap, scan repetitions and many other factors such as substrate and coating material. This makes process parameter optimization a challenging task. In this paper, we present a systematic approach to efficiently find suitable parameters for laser-induced ablation of thin films on susceptible polymer substrates. As an example, we use a sputtered NiCr coating with a thickness of 100 $nm$ on a polyimide film made by spin coating of PI-2611 precursor (@ 2000 $rpm$ > ca. 8 ${\mu}m$, HD microsystems). Irradiation is conducted using a fs-laser with infrared wavelength of 1030 $nm$ and a pulse length of 212 $fs$. The energy per pulse is varied in the range of 0,29 ${\mu}J$ to 4,83 ${\mu}J$, yielding fluence values between 70 $mJ/cm^2$ and 1,11 $J/cm^2$. Ablation threshold fluence for a 100 $nm$ layer of NiCr was found to be ${\phi}_{th}$ ($N_P$:1)=0,50 $J/cm^2$ and the incubation factor was evaluated to be ${\xi}$=0,53. A clear distinction must be made between the material ablation at the surface of a bulk material and the selective removal of a thin film. In the second case effects such as flaking occur in practice and influence the ablation characteristic. We then investigate different varieties of thin film removal including dot-, line- and areal-ablation. The methodology is presented using a practical example, but can be applied to selective ablation of a wide range of thin film systems.

Excimer Laser Ablation of Langmuir‐Blodgett Films

Photoablative etching of Langmuir-Blodgett films

Ultraviolet Laser Ablation of Organic Polymer Films

Photoablative Etching of Polymers for Integrated Optoelectronic Devices

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An automatic Langmuir-Blodgett system based on flowing subphase compression

Laser Photoablation of Poly-Ethylcyanoacrylate and Spin-On-Glass Photoresists

Photoablative Etching of Materials for Optoelectronic Integrated Devices

Processability of organic material for semiconductor packaging by 248 nm excimer laser

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Photoablation of polymers

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EUV ablation of organic polymers at a high fluence

Multi-pulse LIBDE of Fused Silica at Different Thicknesses of the Organic Absorber Layer

Laser Direct Writing for Micromachining of Freeform Surface on n-Type GaAs via Photoelectrochemical Etching

Direct Laser Interference Ablating Nanostructures on Organic Crystals

Laser Micronanostructuing For High-Performance Organic Optoelectronic Devices

Scanning Tunneling Microscopy Observation of Langmuir-Blodgett Diacetylene Compound Films Deposited by Schaefer's Method

Processing Microstructure on Film by Femtosecond Laser

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