Photoelectric Properties of P-Β-fesi2/n-4h-sic Heterojunction Near-Infrared Photodiode

Zheng Chunlei,Pu Hongbin,Li Hong,Chen Zhiming

DOI: https://doi.org/10.1088/1674-4926/36/5/054009

2015-01-01

Abstract:We give the first report on the experimental investigation of a p-beta-FeSi2/n-4H-SiC heterojunction. A p-beta-FeSi2/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputtering and rapid thermal annealing (RTA). Sharp film-substrate interfaces were confirmed by scanning electron microscopy (SEM). The current density-voltage and photoresponse characteristics were measured. The measurements showed that the device exhibited good rectifying properties. The photocurrent density was about 1.82 mA/cm(2) at a bias voltage of -1 V under illumination by a 5 mW, 1.31 mu m laser, and the dark current density was approximately 0.537 mA/cm(2). The detectivity was estimated to be 8.8 x 10(9) cmHz(1/2)/W at 1.31 mu m. All of the measurements were made at room temperature. The results suggest that the p-beta-FeSi2/n-4H-SiC heterojunctions can be used as near-infrared photodiodes that are applicable to optically-activated SiC-based devices.