Self‐Powered Photodetector Based on P‐type CuBi 2 O 4 with Fermi Level Engineering

Zewei Wu,Zemin Zhang,Mengdi Sun,Bing Tan,Bo Liu,Weihua Han,Erqing Xie,Yingtao Li
DOI: https://doi.org/10.1002/admi.202101443
IF: 5.4
2021-01-01
Advanced Materials Interfaces
Abstract:Si-based photodetectors (PDs) have been widely used in human-machine interaction systems due to their robust optoelectronic properties despite limitations of significant large leakage current. To overcome this drawback, a functional overlayer of p-type CuBi2O4 (CBO) is deposited on the surface of n-type Si to build a novel photodetector involving a p-n heterojunction. Such an n-Si/p-CBO photodetector shows an ultralow dark current approximate to 10(-11) A with a high photosensitivity up to 1.69 x 10(4) at zero bias, a strong self-powered characteristics with a photovoltage near 0.55 V, and a fast rise and decay time around 0.1 and 0.3 ms. With these advantages, the device shows great performance in the optical communication system. The thickness-dependent performance indicates that the top layer acts as a light-harvesting semiconductor to generate, separate, and transport photocarriers through the built-in heterojunction. Band alignment analysis confirms this result and reveals the formation of a type-II heterojunction at the interface of n-Si and p-CBO layers. This work demonstrates an effective strategy to reduce the leakage current and improves the responsivity, detectivity, and response speed of Si-based self-powered photodetectors.
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