Strong Correlation of the Growth Mode and Electrical Properties of BiCuSeO Single Crystals with Growth Temperature

Song-Tao Dong,Yang-Yang Lv,Bin-Bin Zhang,Fan Zhang,Shuhua Yao,Y. B. Chen,Jian Zhou,Shan-Tao Zhang,Zheng-Bin Gu,Yan-Feng Chen
DOI: https://doi.org/10.1039/c5ce01215e
IF: 3.756
2015-01-01
CrystEngComm
Abstract:In this paper, BiCuSeO single crystals are successfully grown by a flux method at different growth temperatures (690 degrees C, 730 degrees C and 775 degrees C). The crystal surface morphology, microstructure, chemical composition and electrical properties are systematically characterized. By changing the growth temperature, the growth mechanism evolution, from dislocation-driven spiral growth mode to two-dimensional layer-by-layer mode, is observed due to the different growth supersaturations. Simultaneously, the temperature-dependent resistance confirms the electrical property changes from semiconductor to metal. Chemical analysis proves that BiCuSeO crystals grown at higher temperatures (730 degrees C and 775 degrees C) are slightly non-stoichiometric. The present results demonstrate the possibility of modulating the crystal morphology and electrical properties of BiCuSeO by controlling the supersaturation. This method may be applicable to similar compounds (BiCuOCh (Ch = S, Te)).
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