High Temperature Capacitors Using A Bisco3-Batio3-(K1/2bi1/2)Tio3 Ternary System

Jong Bong Lim,Shujun Zhang,Thomas R. Shrout
DOI: https://doi.org/10.1007/s13391-011-0311-8
2011-01-01
Abstract:BiScO3-BaTiO3 with (K1/2Bi1/2)TiO3 [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100 degrees C to 300 degrees C with flat coefficients of temperature (TC epsilon s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm(3) at 100 kV/cm for the BSBT-KBT20.
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