Refining of Nanopillars Induced by Mn-Doping in Epitaxial Ba(Zr,Ti)O-3 Thin Films

J. He,J. C. Jiang,E. I. Meletis,M. Liu,G. Collins,C. R. Ma,C. L. Chen,A. Bhalla

DOI: https://doi.org/10.1080/10584587.2011.621054

2011-01-01

Integrated Ferroelectrics

Abstract:Microstructures of the epitaxially grown Ba(Zr,Ti)O-3 (BZT) and Mn-doped Ba(Zr,Ti)O-3 (Mn:BZT) thin films on (001) MgO substrate fabricated by pulsed laser deposition were studied using X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution TEM. The XRD studies showed that both epitaxial thin film structures are c-axis oriented. TEM and high-resolution TEM studies demonstrated that both BZT and Mn:BZT films consist of a continuous epitaxial layer near the interface followed by the formation of twin-coupled nanopillars, united by sharing their {111} or {110} plane as a common plane. The microstructure evolution from the epilayer to nanopillars is accomplished by alternatively introducing {111} and {110} plane twin boundaries, resulting in gradual shrinking/enlarging of the lateral size of the epitaxial grains/twin-coupled nanopillars. The lateral size of the nanopillars in BZT films is about four times larger than that in the Mn:BZT films. The refining of the nanopillars in the Mn-doped films is attributed to enhanced twinning facilitated by the preferential presence of Mn ions on the {110} boundary planes.