Abstract:As tellurides and selenides of Bismuth are extensively used thermoelectric materials in the low-temperature range with refrigeration application, A concerted effort is put forth to boost the ZT by co-doping the pristine Bi 2 Se 3 with antimony (Sb) on cation end and tellurium (Te) on anion side of the compound. The double sintered solid-state reaction method is employed in the preparation of Bi 2 Se 3 and (Bi 1− x Sb x ) 2 Se 2.7 Te 0.3 polycrystalline pellets, with x = 0.02, 0.04, and 0.06. The sample exhibits a rhombohedral structure with the space group of R m. FESEM and EDAX analysis are used to confirm surface morphology and elemental composition of the produced samples. The thermoelectric measurements for the pristine and co-doped samples were conducted by the physical property measurement system as well as a considerable increase in the Seebeck coefficient of − 115 μV/K is observed for 0.02 doping of the Sb which is 4.2 times greater than as for pristine (S = − 28 μV/K). Higher concentration doping ( x = 0.04, 0.06) has not reflected any Seebeck coefficient advancement. In contrast, the lowest total thermal conductivity at a low-temperature regime (< 50 K) is observed for x = 0.06 doping concentration which at near room temperature increases beyond the pristine thermal conductivity; whereas, x = 0.02, 0.04 doping concentration shows a decrement in total thermal conductivity at low, at room temperature region the values are almost equivalent to that of pristine. The co-doped samples' electrical resistivity is substantially less than pristine sample. The highest power factor of 3 × 10 –4 μW/mK 2 is obtained for the x = 0.02 sample. The highest ZT value for the x = 0.02 sample is almost 28 times more than a pristine sample. We conducted a study where we combined experimental and DFT methods to investigate thermoelectric properties incorporated into pristine and doped with antimony and tellurium on Bi 2 Se 3 . We have employed this combination to investigate the partial density of states, Seebeck coefficient, power factor using the Boltzmann transport equation. Theoretical thermoelectric data were derived and compared to experimental observations. Hence, using combined experimental and theoretical investigations helps to predict with higher accuracy of thermoelectric properties of semiconducting materials.

Structure Impact on the Thermal and Electronic Properties of Bismuth Telluride by Ab-Initio and Molecular Dynamics Calculations

Microstructure and thermoelectric properties of porous Bi 2 Te 2.85 Se 0.15 bulk materials fabricated by semisolid powder processing

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

Evolution of the Intrinsic Point Defects in Bismuth Telluride-Based Thermoelectric Materials

Revisiting the Reduction of Thermal Conductivity in Nano- to Micro-Grained Bismuth Telluride: The Importance of Grain-Boundary Thermal Resistance

Impact of Vacancy Defects on the Thermal Conductivity of BaAgBi: A Comprehensive Study by Molecular Dynamics Simulations with Neural Network Potentials

Combination Osimertinib and Gefitinib in C797S and T790M EGFR‐Mutated Non–Small Cell Lung Cancer

Experimental determination of phonon thermal conductivity and Lorenz ratio of single-crystal bismuth telluride

Physical properties of Thallium-Tellurium based thermoelectric compounds using first-principles simulations

Physical properties of thermoelectric zinc antimonide using first-principles calculations

Tuning the lattice thermal conductivity in Bismuth Telluride through Cr-doping

Bi-Deficiency Leading to High-Performance in Mg<sub>3</sub>(Sb,Bi)<sub>2</sub>-Based Thermoelectric Materials

First Principles Investigations of the Atomic, Electronic, and Thermoelectric Properties of Equilibrium and Strained Bi2Se3 & Bi2Te3, with van der Waals Interactions

On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$

Achieving Enhanced Thermoelectric Performance in (SnTe) 1- x (Sb 2 Te 3 ) x and (SnTe) 1- y (Sb 2 Se 3 ) y Synthesized via Solvothermal Reaction and Sintering

Revisiting the Electronic Structures and Phonon Properties of Thermoelectric Antimonide-Tellurides: Spin–Orbit Coupling Induced Gap Opening in ZrSbTe and HfSbTe

Integrating band engineering with point defect scattering for high thermoelectric performance in Bi2Si2Te6

Defect Structure Regulation and Thermoelectric Transfer Performance in N-Type Bi2-xSbxTe3-ySey-based Compounds

A comprehensive experimental and DFT analysis on thermoelectric properties of Sb, Te co-doped Bi2Se3 polycrystals

Point Defect Engineering of High‐Performance Bismuth‐Telluride‐Based Thermoelectric Materials

Enhanced Thermoelectric and Mechanical Performances in Sintered Bi0.48Sb1.52Te3-AgSbSe2 Composite.