Galvanic Effect of Au–Ag Electrodes for Conductive Bridging Resistive Switching Memory

chi cun kuo,i chieh chen,c c shih,kuan chang chang,chao hsien huang,po hsun chen,tingchang chang,t m tsai,jing shuen chang,j c huang

DOI: https://doi.org/10.1109/LED.2015.2496303

IF: 4.8157

2015-01-01

IEEE Electron Device Letters

Abstract:We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive switching memory. Because of the different chemical activities between Au and Ag metals, the Ag element in the Au-Ag electrode will drift into silicon oxide easily to achieve the resistive switching properties during device operation. In this letter, we found that the forming voltage of the device will be reduce...