Enhancement of Resistive Switching Characteristics of Sol–Gel TiO x RRAM Using Ag Conductive Bridges

Chih-Chieh Hsu,Pei-Xuan Long,Yu-Sheng Lin

DOI: https://doi.org/10.1109/ted.2020.3036020

IF: 3.1

2021-01-01

IEEE Transactions on Electron Devices

Abstract:In this article, the effects of active Ag electrodes on the ${R}_{ \mathrm{\scriptscriptstyle OFF}}/{R}_{ \mathrm{\scriptscriptstyle ON}}$ ratio, SET/RESET voltages, and endurance characteristics of a sol–gel TiOx resistive memory are investigated. Stable bipolar resistive switching (RS) behavior with a large ${R}_{ \mathrm{\scriptscriptstyle OFF}}/{R}_{ \mathrm{\scriptscriptstyle ON}}$ ratio of 105 is observed in an Ag/TiOx/n+-Si resistive memory. The SET and RESET processes can only be triggered by positive and negative voltages, respectively. Nonpolar RS behavior is found when directly using a tungsten probe to measure the ${I}$ –${V}$ curves of a TiOx/n+-Si device. A high voltage of ~±40 V is needed to induce the SET process. In addition, the RS behavior is not stable and can only repeat few times. When the top and bottom electrodes are both Ag (Ag/TiOx/Ag), the SET process can be easily triggered by a low voltage regardless of the voltage polarity. However, the RESET process does not happen in the following voltage cycles. Dramatic differences in the RS characteristics of these devices verify the impact of the Ag electrode on the RS characteristics of the sol–gel TiOx layer.

engineering, electrical & electronic,physics, applied