A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method

Meiyun Zhang,Guoming Wang,Shibing Long,Zhaoan Yu,Yang Li,Dinglin Xu,Hangbing Lv,Qi Liu,Enrique Miranda,Jordi Sune,Ming Liu
DOI: https://doi.org/10.1109/led.2015.2493540
IF: 4.8157
2015-01-01
IEEE Electron Device Letters
Abstract:The correlation between the set time (t(set)) and the initial off-state resistance (R-OFF) statistics for a Ti/ZrO2/Pt bipolar resistive random access memory device was investigated. The width-adjusting pulse operation method, which can significantly improve the switching uniformity, was used to accurately measure t(set), and the gathered statistical data were analyzed using Weibull distributions. Both the Weibull slope (beta(t)) and the scale factor (t(set63%)) of t(set) distributions were found to increase logarithmically with ROFF. The observed t(set)-R-OFF interdependence provides a guideline in improving the switching uniformity and optimizing the tradeoff between set speed and disturb immunity. An analytical cell-based model was developed to explain the R-OFF-dependent t(SET) statistics, which can be implemented in statistical compact models and circuit simulators for improving RRAM cell design and memory performances.
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