Model of Vernier Devices in Silicon-On-Insulator Technology

Guofang Fan,Yuan Li,Chunguang Hu,Lihua Lei,Dong Zhao,Hongyu Li,Yunhan Luo,Zhen
DOI: https://doi.org/10.1016/j.infrared.2014.04.002
IF: 2.997
2014-01-01
Infrared Physics & Technology
Abstract:In order to increase the number of channels that could be multiplexed or demultiplexed in the dense wavelength division multiplexed (DWDM) system based on the resonators on silicon-on-insulator (SOI) technology, the Vernier effect in the series-coupled racetrack resonators is presented to extend the free spectral range (FSR) of the DWDM systems. A method is developed based on a matrix approach to simulate Vernier devices. A three-dimensional full vectorial finite difference (FVFD) model, specifically suited for high index contrast and smaller size waveguides, for example, a waveguide in SOI technology, is developed to obtain the properties of a waveguide. Finally, the Vernier effect in the two series-coupled racetrack resonators is experimentally verified with an improved FSR and interstitial resonance suppression.
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