Abstract:Research interest in thin-film transistor (TFT)-based flexible electronics for next-generation foldable and rollable displays is increasing, centering on flexible plastic substrates such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI). For flexible electronics using plastic substrates, it is important to select suitable semiconductor materials that can be deposited at low substrate temperature. Metal oxide (MO) semiconductors such as indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO) are attracting attention as suitable candidates for plastic substrate electronics because of their higher mobility and optical transmittance than hydrogenated amorphous silicon (a-Si:H). In addition, since it can be processed at a lower temperature than low-temperature polysilicon (LTPS), it can be easily applied to flexible plastic substrates. One of the greatest advantages of MO is that it can be easily fabricated by conventional semiconductor processing methods such as sputtering, atomic laser deposition, and solution processes. Among them, solution-processed deposition method is particularly advantageous in terms of manufacturing efficiency because it does not require a separate vacuum system, and can efficiently utilize raw materials, so the fabrication cost is inexpensive. In particular, spray pyrolysis can guarantee environmental stability, high mobility, and large area production than other solution processes. In this work, we developed the high-performance, flexible a-IGZO/Al 2 O 3 TFTs using spray pyrolysis fabricated on the flexible PI substrate. In a previous study, we developed a method to reduce curling and electrostatic discharge (ESD) damage to PI substrates by using a mixture of carbon nanotubes (CNTs) and graphene oxide (GO) between carrier glass and PI substrate. Therefore, it was possible to mechanically detach the TFTs on PI substrate and handle them easily even after detachment. The spray-pyrolyzed Al 2 O 3 film is one of the high-k dielectric materials, which can lower the operating voltage, so the low-power consumption of the TFT backplane can be realized. The flexible spray-pyrolyzed a-IGZO/Al 2 O 3 TFT exhibits the field-effect mobility (μ FE ) of 9.75 cm 2 V −1 s −1 , threshold voltage (V TH ) of −0.8 V, subthreshold swing (SS) of 0.29 V dec −1 , and on/off current ratio of 6.2 × 10 7 . Even without TFT passivation layer, it shows environmental stability. The TFTs show robust electrical performance even under tensile strain with a bending radius of 1 mm. In addition, it showed stable electrical characteristics even in the repeated bending test of 30,000 cycles under compressive strain with a bending radius of 1 mm. This is due to fewer defects resulting from the smooth interface of the a-IGZO film and the Al 2 O 3 film deposited through spray pyrolysis. Therefore, spray-pyrolyzed a-IGZO/Al 2 O 3 TFT fabricated on PI substrate is a promising candidate for next-generation foldable display application. Figure 1

26.3: Development of Nanoporous Anodic Aluminum Oxide (np‐aao) Thin Template on PET/Ti Flexible Substrate for Flexible Liquid Crystal Display (flexible‐lcd) Application

Liquid Crystal Alignment in Nanoporous Anodic Aluminum Oxide Layer for LCD Panel Applications.

62.2: Alignment of Liquid Crystal with Nanoporous Anodic Aluminum Oxide (np‐aao) Layer for LCD Application

Single-crystalline silicon nanomembrane thin-film transistors with anodized aluminum oxide as a gate dielectric on rigid and flexible substrates

Nucleation and Growth Study of Al2O3 Film Fabricated Through Atomic Layer Deposition on Pet Substrate

Vertical Alignment of Liquid Crystal on ITO Glass with Anodic Aluminum Oxide Thin Film

High‐performance Nd: AIZO/Al2O3 dual active layer design without thermal annealing: high‐speed electron transport and defect modification in thin film transistors

Vanadium Dioxide Nanoparticle Doped Polyimide Hybrid Alignment Layers for Flexible Liquid Crystal Displays

Implementation of a New Capacitive Touch Sensor Using the Nanoporous Anodic Aluminum Oxide (np-AAO) Structure

Implementation of Nanoporous Anodic Aluminum Oxide Layer with Different Porosities for Interferometric RGB Color Pixels As Handheld Display Application

Flexible Nanoporous Anodic Aluminum Oxide(np-Aao) Template Coated with Self-Assembled Au Nanocrown Array for Nanophotonic Switching

A flexible AMOLED display on the PEN substrate driven by oxide thin-film transistors using anodized aluminium oxide as dielectric

Novel Transparent TiO2/AgNW-Si(NH2)/PET Hybrid Films for Flexible Smart Windows.

Synthesis and Characterization of Semi-Alicyclic Poly(amic Acid) Varnishes Via Bis-Spironobornane Dianhydride and the Derived Polyimide Alignment Layers for Potential Applications in TFT-LCDs

Nanoporous Anodic Aluminum Oxide As A Promising Material for the Electrostatically-Controlled Thin Film Interference Filter

Flexible Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with Aluminum Oxide Gate Insulator on Polyimide Substrate By Spray Pyrolysis for Foldable Display

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

Novel Transparent TiO 2 /AgNW–Si(NH 2 )/PET Hybrid Films for Flexible Smart Windows

Flexible Organic Light-Emitting Diodes with ITO/Ag/ITO Multi-Layers As Anodes

Organic/Inorganic Hybrid Thin-Film Encapsulation Using Inkjet Printing and PEALD for Industrial Large-Area Process Suitability and Flexible OLED Application.

Improved barrier performance of Al 2 O 3 /polymer multi-layers by insertion of Alucone as hydrolysis inhibition layer and interfacial infiltration