Abstract:This study investigates the effect of silicon carbon nitride (SiCN) as an interlayer for ZnO-based resistive random access memory (RRAM). SiCN was deposited using plasma-enhanced chemical vapor deposition (PECVD) with controlled carbon content, achieved by varying the partial pressure of tetramethylsilane (4MS). Our results indicate that increasing the carbon concentration enhances the endurance of RRAM devices but reduces the on/off ratio. Devices with SiCN exhibited lower operating voltages and more uniform resistive switching behavior. Oxygen migration from ZnO to SiCN is examined by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses, promoting the formation of conductive filaments (CFs) and lowering set voltages. Additionally, we examined the impact of top electrode oxidation on RRAM performance. The oxidation of the Ti top electrode was found to reduce endurance and increase low resistive state (LRS) resistance, potentially leading to device failure through the formation of an insulating layer between the electrode and resistive switching material. The oxygen storage capability of SiCN was further confirmed through high-temperature stress tests, demonstrating its potential as an oxygen reservoir. Devices with a 20 nm SiCN interlayer showed significantly improved endurance, with over 500 switching cycles, compared to 62 cycles in those with a 5 nm SiCN layer. However, the thicker SiCN layer resulted in a notably lower on/off ratio due to reduced capacitance. These findings suggest that SiCN interlayers can effectively enhance the performance and endurance of ZnO-based RRAM devices by acting as an oxygen reservoir and mitigating the top electrode oxidation effect.

Impact of Ni Concentration on the Performance of Ni Silicide/HfO 2 /TiN Resistive RAM (RRAM) Cells

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Switching Behaviors of HfO2/NiSix Based RRAM

Resistive Switching Characteristics of Pt/TaOx/HfNx Structure and Its Performance Improvement

Compliance Current Dominates Evolution of NiSi2 Defect Size in Ni/dielectric/Si RRAM Devices

Ni-Containing Electrodes for Compact Integration of Resistive Random Access Memory With CMOS

Ni Electrode Unipolar Resistive RAM Performance Enhancement by $\hbox{alo}_{y}$ Incorporation into $\hbox{hfo}_{x}$ Switching Dielectrics

Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology

HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

Effect of Ni3+ Concentration on the Resistive Switching Behaviors of Nio Memory Devices

Low Operation Current of Si/HfO2 Double Layers Based RRAM Device with Insertion of Si Film

A Self-Rectifying $\hbox{hfo}_{x}$ -Based Unipolar RRAM with NiSi Electrode

Effect of the Bottom Electrode on the Digital and Analog Resistive Switching Behavior of SiNx-based RRAM

Effect of SiCN thin film interlayer for ZnO-based RRAM

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

Silicides as new electrode/heater for compact integration of phase change memory with CMOS

In Situ Observation of Nickel As an Oxidizable Electrode Material for the Solid-Electrolyte-Based Resistive Random Access Memory

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Reliable Resistive Switching of Epitaxial Single Crystalline Cubic Y-HfO2 RRAMs with Si As Bottom Electrodes.