Abstract:Electrical characterizations of Nb2O5 doped 0.65BiFeO3–0.35BaTiO3 (0.65BF–0.35BT) ceramic were carried out over broad temperature and frequency ranges through dielectric spectroscopy, impedance spectroscopy, and ac conductivity measurements. The dielectric constant and loss tangent are drastically reduced with introducing Nb2O5 into the 0.65BF–0.35BT system. Two dielectric anomalies are detected in the temperature regions of 100 °C ≤ T ≤ 280 °C and 350 °C ≤ T ≤ 480 °C, and the Curie temperature (TC) was confirmed in higher temperature region. A dielectric relaxation with large dielectric constants was detected near the TC. This dielectric relaxation becomes even stronger with the gradual increase in the Nb2O5 content. Impedance spectroscopy results clearly show the contributions of grains and grain boundaries in the frequency range of 100 Hz ≤ f ≤ 1 MHz, and the relaxation processes for grains and grain boundaries are non-Debye-type. The grain boundaries are more resistive than that of the grains, revealing the inhomogeneity in samples. The experimental results are well fitted based on a Maxwell-Wagner (MW) interfacial polarization model below 100 kHz, and the MW interfacial polarization effect becomes more and more obvious with the increase in the Nb2O5 content. The increase in dielectric constant is possibly related to space charge polarization, which is caused by charges accumulated at the interface between the grain and grain boundaries. Frequency dependence of the ac conductivity confirms the MW interfacial polarization effect below 100 kHz.

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