Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Band Tail-Induced Photoluminescence Broadening in Heavily In-doped N-Type ZnO Nanowires

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Mechanism of intense blue photoluminescence in silica wires

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Photoluminescence of Nominally Undoped Heavy N-Type ZnO Nanowires

PHOTOLUMINESCENCE EMITTING PROPERTIES OF SINGLE ZnO NANOWIRE STUDIED BY SCANNING NEAR-FIELD OPTICAL MICROSCOPE

Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

Surface effects on photoluminescence of single ZnO nanowires

Photoluminescence of ZnO Nanowires: A Review

Photoluminescence in Heavily Doped Zno : N : in Films

Charged States and Band-Gap Narrowing in Codoped ZnO Nanowires for Enhanced Photoelectrochemical Responses

Electrophotoluminescence of Sol-Gel Derived Zno Film: Effect of Electric Field on Near-Band-Edge Photoluminescence

Microphotoluminescence Study Of Individual Suspended Zno Nanowires

Nonlinear Photoluminescence from ZnO Nanobelts

Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped Zno Nanowires

Near Band Edge Photoluminescence Of Zno Nanowires: Optimization Via Surface Engineering

Raman and Photoluminescence Properties of Highly Cu Doped ZnO Nanowires Fabricated by Vapor-Liquid-solid Process

Tunable Band Offset and Recombination in ZnO Nanowire–cdte Quantum Dot Heterostructures

Photoluminescence Properties of Quasialigned Zncdo Nanorods

Nature of Red Luminescence Band in Research-Grade ZnO Single Crystals: A “Self-Activated” Configurational Transition