Abstract:Organic electroluminescence is one of the most promising technology for next generation of flat panel display. Hole transporting layer represents the weakest link in the electroluminescent structure considering the thermal stability of the materials. The most widely used hole transporting material, N,N'-bis (1-naphthyl)-N, N'-diphenyl-1, 1'-biphenyl-4, 4'-diamine (NPB), has a glass transition temperature ( Tg) of 95℃, which is much lower than that of the electron transporting material, tris (8- hydroxyquinoline) aluminum (Alq3) . Based on the good hole transporting property and suitable energy level matched with other materials of NPB, two new hole transporting materials: N, N'-bis(1-naphthyl)- N,N'-di(4-methylphenyl)-1,1'-biphenyl-4, 4'-diamine (NTB) and N, N'-bis(1-naphthyl)-N, N'-di(4- tert-butylphenyl)-1, 1'-biphenyl-4, 4'-diamine (NBB) were synthesized by introducing methyl and tert- butyl groups into NPB to improve its thermal stability. The glass transition temperature (Tg) of NTB and NBB measured by DSC are 108℃ and 129℃ respectively, showing better thermal stability than that of NPB. The ionization energy obtained by ultraviolet photoemission spectroscopy is 5. 2eV for all of NPB and its derivatives. The emission peak in the photoluminescent spectra of the solid films of NTB and NBB are at 455nm and 460nm, which are close to the emission peak of NPB at 440nm. The organic electroluminescent devices using NPB, NTB and NBB as hole transporting layer (HTM) were fabricated with the structure of ITO/CuPc(20nm)/HTM(50nm)/Alq3(60nm)/LiF(0.5nm)/Al(100nm). The emission spectra of the three devices are the same and the green color light was emitted from the Alq3 layer. The turn-on voltages of the devices are 11, 9, 8V for NPB, NTB and NBB, respectively. The brightness of the devices at 15V are 1 000, 1 300, 1 200cd/m2 for NPB, NTB and NBB. The devices with NTB and NBB also show better longevity than that of NPB in a prelimin ary test.

Trap States in Doped Tris-8-(Hydroxyquinoline) Aluminum Using Thermally Stimulated Luminescence

Investigation of Energy Transfer and Charge Trapping in Dye-Doped Organic Light-Emitting Diodes by Magneto-Electroluminescence Measurement

The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

Investigation of Charge Trapping Induced by DCM–TPA Dopant in Organic Light Emitting Devices Composed of (NPB:Alq3):DCM–TPA Mixed Host-Doped Emitting Layer

The Carrier-Trapping Effect of Dye Doped in Alq

Electric Field-Induced Hole Injection-Enhanced Photoluminescence in A N,N '-Bis(3-methylphenyl)-n,n '-Bis(phenyl)-benzidine-based Emitter

Optimal thickness of hole transport layer in doped OLEDs

Electron Blocking and Hole Injection: the Role of N,N′-Bis(naphthalen-1-y)-N,N′-bis(phenyl)benzidine in Organic Light-Emitting Devices

Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline) Aluminum Film

Internal Electric Field in Tris-(8-hydroxyquinoline)aluminium (alq) Based Light Emitting Diode

Emission Characteristics Of Organic Light-Emitting Diodes With A Heterostructure Of Dye Doped Poly(N-Vinyl Carbazole)/Tris(8-Hydroxyquinoline) Aluminum

In Situ Photoluminescence Investigation Of Doped Alq

First-principle band structure calculations of tris(8-hydroxyquinolinato)aluminum.

Energy trapping to substitutional and charge compensation defects in persistent luminescent BaAl 2 O 4 :Tb 3+

Bright electroluminescent devices with tunable spectra obtained by strictly controlling the doping concentration of electron injection sensitizer

Characterization of Traps in InAlN by Optically and Thermally Stimulated Deep Level Defect Spectroscopies

Differentiation between shallow and deep charge trap states on single poly(3-hexylthiophene) chains through fluorescence photon statistics

Exciton Dissociation in Organic Light Emitting Diodes at the Donor-Acceptor Interface.

Blue and Yellow Emission from Derivates of Tris(8-Hydroxyquinoline)aluminium Light-Emitting Diodes

Synthesis of Thermal Stable Organic Hole Transporting Materials for Use in Electroluminescent Devices

Control Of Carrier Transport In Organic Semiconductors By Aluminum Doping