Effect of Zn Concentration on Multiferroic and Fatigue Behavior of Bi[sub 0.90]la[sub 0.10]fe[sub 1−x]zn[sub X]o[sub 3] Thin Films

Jiagang Wu,John Wang
DOI: https://doi.org/10.1149/1.3490762
2010-01-01
Abstract:Multiferroic and fatigue behaviors of Bi0.90La0.10Fe1-xZnxO3 (BLFZO-x) thin films grown in situ on SrRuO3/Pt/TiO2/SiO2/Si(100) substrates by radio frequency sputtering are dependent on Zn content. Their dielectric permittivity shows a linear increase with increasing Zn content and the fatigue endurance slightly decreases at x <= 0.10. However, an excess amount of Zn (x = 15%) degraded the electrical behavior due to an obvious increase in oxygen vacancies caused by Zn2+ substitution for Fe3+. The BLFZO-0.10 thin film exhibits optimized ferroelectric behavior (2P(r) similar to 145.06 mu C/cm(2)) among the film compositions investigated. The M-s value decreases with increasing Zn content due to the increase in nonmagnetic Zn in bismuth ferrite. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3490762] All rights reserved.
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