Abstract:Two-dimensional layered transition-metal dichalcogenides (TMDs) have attracted intense interest for their layer number-dependent electronic properties and have exciting potential for atomically thin electronics and optoelectronics. The studies to date have primarily been limited to exfoliated materials with limited control of the size, layer number, and yield. Despite considerable efforts to date, it remains a significant challenge to produce large-sized TMD single crystals with precise control of the layer number. Here, we report the robust growth of high-quality WSe2 single-crystal domains with a selectively controlled thickness in a reverse-flow chemical vapor deposition system with a solid precursor. By introducing a pre-annealing step to tune elemental distribution and volatilization rate of the solid precursor, we stabilize the vapor supply to achieve a highly uniform nucleation and growth, and thus ensure the precise control of the layer number for the highly selective growth of monolayer or bilayer WSe2 single crystals (>500 μm). The transmission electron microscopy and optical characterizations of the resulting WSe2 single crystals exhibit excellent crystalline quality with systematically tunable optical properties. Electrical transport studies further show that the WSe2 field-effect transistors exhibit p-type semiconductor characteristics with effective hole carrier mobility up to 92 cm2 V–1 s–1 in monolayer and 145 cm2 V–1 s–1 in bilayer materials at room temperature. This simple approach opens up a new avenue for the highly controlled synthesis of WSe2 atomic layers for both fundamental studies and technological applications.

ChemInform Abstract: Synthesis and Enhanced Electrochemical Catalytic Performance of Monolayer WS2(1‐x)Se2x with a Tunable Band Gap.

Synthesis and enhanced electrochemical catalytic performance of monolayer WS2(1-x) Se2x with a tunable band gap.

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Controllable Doping Characteristics for WSxSey Monolayers Based on the Tunable S/Se Ratio.

High-metallic-phase-concentration Mo1–xWxS2 nanosheets with expanded interlayers as efficient electrocatalysts

Defects in monolayer WS2 grown via sulfurization of WSe2

Energetics and electronic structure of Janus WSSe formation by continuous chalcogen substitutions

Controllable synthesis of monolayer WSe 2 crystals by Copper-Assisted chemical vapor deposition

Ultrafast Self-Limited Growth of Strictly Monolayer Wse2 Crystals

Synthesis of wafer-scale WSe<inf>2</inf> by WO<inf>x</inf> selenization on SiO<inf>2</inf> / Si substrates

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Large-scale Synthesis of WSe2 Atomic Layers on SiO2/Si

Facile Access to Shape-Controlled Growth of WS2 Monolayer Via Environment-Friendly Method

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

Chemical Vapor Deposition of Monolayer WS2 Nanosheets on Au Foils Toward Direct Application in Hydrogen Evolution

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

Quasi-Monolayer Ag2Se/1T-WSe2 Nanosheets for Enhanced Electrocatalytic Hydrogen Evolution and Charge Storage