Low Temperature Fabrication of High Performance P-N Junction on the Ti Foil for Use in Large-Area Flexible Dye-Sensitized Solar Cells

Yaoming Xiao,Jihuai Wu,Jianming Lin,Miaoliang Huang,Leqing Fan,Zhang Lan,Gaoyi Han,Sidian Li
DOI: https://doi.org/10.1016/j.electacta.2013.11.096
IF: 6.6
2013-01-01
Electrochimica Acta
Abstract:A p-n junction of poly (3,4-ethylenedioxythiophene) (PEDOT) - dye-sensitized TiO2 is introduced into the large-area flexible dye-sensitized solar cell (DSSC) as an anode. This p-n junction is fabricated using a cyclic voltamrnetry electropolyrnerization of PEDOT onto a Ti foil substrate, and then treated in the aqueous ammonia, finally subjected to coating TiO2 by a doctor-scraping technique, all of preparations and treatments are carried out under low temperature. The obtained p-n junction forms a single directional pathway for electron transport which benefites the charge separation. The large-area (10 cm(2)) flexible DSSC with the p-n junction demonstrates an enhanced photovoltaic conversion efficiency of up to 6.51% compared to 4.89% for the DSSC without the p-n junction due to its low series resistance and charge-transfer resistance, high effective electron lifetime for recombination. As a result, the DSSC fabricated using the p-n junction can be suitable for high powered DSSC applications. (C) 2013 Elsevier Ltd. All rights reserved.
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